摘要
Abstract
Silicon-based single-photon avalanche diodes(SPADs),has the advantages of small size,low power consumption,low dark count rate,high quantum efficiency in visible light band,single-photon sensi-tivity,and has important applications in transportation,medical and military fields.However,as for planar silicon-based SPAD,the dark count rate and single photon detection rate in visible and near-infrared band still need to be optimized,and the influences of doping technology on the electrical characteristics of the device are still fuzzy.In this work,a silicon-based Geiger mode APD with single-photon detection was designed and fab-ricated,which was capable of detecting ability up to single photon level in the visible and near-infrared band.With the breakdown voltage of 38.1 V,the device achieved a dark count rate of 200 Hz at the excess bias of 2.4 V.The single-photon detection efficiency at 532 nm reached 10.56%,and that of 850 nm is 6.49%.Breakdown voltage tuning effect was achieved through the adjustment of process parameters,and the break-down voltage modulation range covers 30～40 V.The device has shown a good engineering application pros-pect,and its photoelectric performance modulation effect can be further applied to the commercial manufac-ture of silicon-based Geiger mode APD.关键词
雪崩光电二极管/单光子探测/盖革模式/硅/可见光/近红外Key words
Avalanche photodiodes/Single-photon detection/Geiger mode/Silicon/Visible light/Near-infrared分类
信息技术与安全科学
