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Low-resistance Ohmic contact for GaN-based laser diodes

Junfei Wang Junhui Hu Chaowen Guan Songke Fang Zhichong Wang Guobin Wang Ke Xu Tengbo Lv Xiaoli Wang Jianyang Shi Ziwei Li Junwen Zhang Nan Chi Chao Shen

Journal of Semiconductors2024，Vol.45Issue(12)：P.145-150,6.

Journal of Semiconductors2024，Vol.45Issue(12)：P.145-150,6.DOI:10.1088/1674-4926/24060018

Low-resistance Ohmic contact for GaN-based laser diodes

Junfei Wang ¹Junhui Hu ¹Chaowen Guan ¹Songke Fang ¹Zhichong Wang ¹Guobin Wang ²Ke Xu ²Tengbo Lv ³Xiaoli Wang ³Jianyang Shi ¹Ziwei Li ¹Junwen Zhang ¹Nan Chi ¹Chao Shen¹

作者信息

1. Key Laboratory for Information Science of Electromagnetic Waves(MoE),School of Information Science and Technology,Fudan University,Shanghai 200438,China
2. Suzhou Institute of Nano-Tech and Nano-Bionics,Chinese Academy of Sciences,Suzhou 215123,China
3. School of Microelectronics,Xi’an Jiaotong University,Xi’an 710049,China
折叠

摘要

关键词

p-GaN/Ohmic contact/specific contact resistance

分类

信息技术与安全科学

引用本文复制引用

Junfei Wang,Junhui Hu,Chaowen Guan,Songke Fang,Zhichong Wang,Guobin Wang,Ke Xu,Tengbo Lv,Xiaoli Wang,Jianyang Shi,Ziwei Li,Junwen Zhang,Nan Chi,Chao Shen..Low-resistance Ohmic contact for GaN-based laser diodes[J].Journal of Semiconductors,2024,45(12):P.145-150,6.

基金项目

funded by the Natural Science Foundation of China Project,grant number 62274042 （）

Natural Science Foundation of Shanghai,grant number 21ZR1406200 （）

the Key Research and Development Program of Jiangsu Province,grant number BE2021008-5. （）

Journal of Semiconductors

OACSTPCDEI

ISSN：1674-4926

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