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Laser processing induced nonvolatile memory in chaotic graphene oxide films for flexible reservoir computing applications

Bo Chen Baojie Zhu Yifan Wu Pengpeng Sang Jixuan Wu Xuepeng Zhan Jiezhi Chen

Journal of Semiconductors2024，Vol.45Issue(12)：P.130-134,5.

Journal of Semiconductors2024，Vol.45Issue(12)：P.130-134,5.DOI:10.1088/1674-4926/24080045

Laser processing induced nonvolatile memory in chaotic graphene oxide films for flexible reservoir computing applications

Bo Chen ¹Baojie Zhu ¹Yifan Wu ¹Pengpeng Sang ¹Jixuan Wu ¹Xuepeng Zhan ¹Jiezhi Chen¹

作者信息

1. School of Information Science and Engineering(ISE),Shandong University,Qingdao 266237,China
折叠

摘要

关键词

chaotic graphene oxide/laser processing/reservoir computing

分类

信息技术与安全科学

引用本文复制引用

Bo Chen,Baojie Zhu,Yifan Wu,Pengpeng Sang,Jixuan Wu,Xuepeng Zhan,Jiezhi Chen..Laser processing induced nonvolatile memory in chaotic graphene oxide films for flexible reservoir computing applications[J].Journal of Semiconductors,2024,45(12):P.130-134,5.

基金项目

supported by National Key Research and Development Program of China (2023YFB4402500,2023YFB4402400) （2023YFB4402500,2023YFB4402400）

National Natural Science Foundation of China (621041314) （621041314）

Natural Science Foundation of Shandong Province (ZR2023LZH007) （ZR2023LZH007）

Program of Qilu Young Scholars of Shandong University. （）

Journal of Semiconductors

OACSTPCDEI

ISSN：1674-4926

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