首页|期刊导航|Journal of Semiconductors|Displacement damage effects in MoS_(2)-based electronics

Displacement damage effects in MoS_(2)-based electronics

Kaiyue He Zhanqi Li Taotao Li Yifu Sun Shitong Zhu Chao Wu Huiping Zhu Peng Lu Xinran Wang Maguang Zhu

Journal of Semiconductors2024，Vol.45Issue(12)：P.152-158,7.

Journal of Semiconductors2024，Vol.45Issue(12)：P.152-158,7.DOI:10.1088/1674-4926/24090027

Displacement damage effects in MoS_(2)-based electronics

Kaiyue He ¹Zhanqi Li ²Taotao Li ³Yifu Sun ⁴Shitong Zhu ⁵Chao Wu ⁴Huiping Zhu ⁶Peng Lu ⁶Xinran Wang ⁷Maguang Zhu¹

作者信息

1. School of Integrated Circuits,Nanjing University,Suzhou 215000,China Suzhou Laboratory,Suzhou 215000,China Jihua Laboratory,Foshan 528200,China
2. School of Integrated Circuits,Nanjing University,Suzhou 215000,China Jihua Laboratory,Foshan 528200,China
3. School of Integrated Circuits,Nanjing University,Suzhou 215000,China Suzhou Laboratory,Suzhou 215000,China
4. School of Integrated Circuits,Nanjing University,Suzhou 215000,China
5. Suzhou Laboratory,Suzhou 215000,China
6. Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China
7. School of Integrated Circuits,Nanjing University,Suzhou 215000,China Suzhou Laboratory,Suzhou 215000,China School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures,Nanjing University,Nanjing 210000,China
折叠

摘要

关键词

MoS_(2)/field effect transistor/displacement damage effect/radiation hardness/proton radiation

分类

信息技术与安全科学

引用本文复制引用

Kaiyue He,Zhanqi Li,Taotao Li,Yifu Sun,Shitong Zhu,Chao Wu,Huiping Zhu,Peng Lu,Xinran Wang,Maguang Zhu..Displacement damage effects in MoS_(2)-based electronics[J].Journal of Semiconductors,2024,45(12):P.152-158,7.

基金项目

supported by the National Natural Science Foundation of China (Grant No.62301247) （Grant No.62301247）

the Fundamental Research Funds for the Central Universities (Grant No.2024300427) （Grant No.2024300427）

the Natural Science Foundation of Jiangsu Province (Grant No.BK20230778) （Grant No.BK20230778）

the Key Research and Development Program of Jiangsu Province (Grant No.BK20232009) （Grant No.BK20232009）

the Innovation Leading Talent Foundation of Suzhou (Grant No.ZXL2023164) （Grant No.ZXL2023164）

Guangdong Major Project of Basic Research (Grant No.2021B0301030003) （Grant No.2021B0301030003）

Jihua Laboratory (Project No.X210141TL210). （Project No.X210141TL210）

Journal of Semiconductors

OACSTPCDEI

ISSN：1674-4926

访问量0

下载量0

段落导航