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Short-circuit failure modes and mechanism investigation of 1200 V planar SiC MOSFETs

Yi Huang Qiurui Chen Rongyao Ma Kaifeng Tang Qi Wang Hongsheng Zhang Ji Ding Dandan Xu Sheng Gao Genquan Han

Journal of Semiconductors2024，Vol.45Issue(12)：P.136-143,8.

Journal of Semiconductors2024，Vol.45Issue(12)：P.136-143,8.DOI:10.1088/1674-4926/24060009

Short-circuit failure modes and mechanism investigation of 1200 V planar SiC MOSFETs

Yi Huang ¹Qiurui Chen ¹Rongyao Ma ²Kaifeng Tang ²Qi Wang ¹Hongsheng Zhang ¹Ji Ding ²Dandan Xu ²Sheng Gao ³Genquan Han⁴

作者信息

1. School of Optoelectronic Engineering,Chongqing University of Posts and Telecommunications,Chongqing 400065,China
2. China Resources Microelectronics(Chongqing)Limited,Chongqing 400030,China
3. School of Optoelectronic Engineering,Chongqing University of Posts and Telecommunications,Chongqing 400065,China China Resources Microelectronics(Chongqing)Limited,Chongqing 400030,China
4. School of microelectronics,Xidian University,Xi''an 710126,China
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摘要

关键词

SiC MOSFETs/short-circuit failure mode/mechanical stresses/cracks/hot spot

分类

信息技术与安全科学

引用本文复制引用

Yi Huang,Qiurui Chen,Rongyao Ma,Kaifeng Tang,Qi Wang,Hongsheng Zhang,Ji Ding,Dandan Xu,Sheng Gao,Genquan Han..Short-circuit failure modes and mechanism investigation of 1200 V planar SiC MOSFETs[J].Journal of Semiconductors,2024,45(12):P.136-143,8.

基金项目

supported by the Science and Technology Innovation Key R&D Program of Chongqing (Grant No.2023TIADSTX0037) （Grant No.2023TIADSTX0037）

the National Natural Science Foundation of China (Grant No.62404026) （Grant No.62404026）

the General Program of National Natural Science Foundation of Chongqing (Grant Nos.CSTB2023NSCQ-MSX0475,CSTB2024NSCQ-MSX0331) （Grant Nos.CSTB2023NSCQ-MSX0475,CSTB2024NSCQ-MSX0331）

the Science and Technology Research Program of Chongqing Municipal Education Commission (Grant No.KJQN202400609). （Grant No.KJQN202400609）

Journal of Semiconductors

OACSTPCDEI

ISSN：1674-4926

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