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Growth,characterization,and transport calculation of Ge/SiGe heterojunction:strategy for the growth of undoped Ge quantum wells

Yiwen Zhang Jun Deng Zonghu Li Xinyou Liu Haiou Li Baochuan Wang Jun Luo Zhenzhen Kong Gang Cao Guoping Guo Chao Zhao Guilei Wang

Journal of Semiconductors2024，Vol.45Issue(12)：P.62-70,9.

Journal of Semiconductors2024，Vol.45Issue(12)：P.62-70,9.DOI:10.1088/1674-4926/24080034

Growth,characterization,and transport calculation of Ge/SiGe heterojunction:strategy for the growth of undoped Ge quantum wells

Yiwen Zhang ¹Jun Deng ²Zonghu Li ²Xinyou Liu ²Haiou Li ³Baochuan Wang ³Jun Luo ⁴Zhenzhen Kong ⁴Gang Cao ³Guoping Guo ³Chao Zhao ⁵Guilei Wang⁶

作者信息

1. Laboratory of Fabrication Technologies for Integrated Circuits,Chinese Academy of Sciences,Beijing 100029,China Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China School of Electronic Electrical and Communication Engineering,University of Chinese Academy of Sciences,Beijing 100049,China Hefei National Laboratory,University of Science and Technology of China,Hefei 230088,China
2. Hefei National Laboratory,University of Science and Technology of China,Hefei 230088,China
3. Hefei National Laboratory,University of Science and Technology of China,Hefei 230088,China CAS Key Laboratory of Quantum Information,University of Science and Technology of China,Hefei 230026,China
4. Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China School of Electronic Electrical and Communication Engineering,University of Chinese Academy of Sciences,Beijing 100049,China
5. School of Electronic Electrical and Communication Engineering,University of Chinese Academy of Sciences,Beijing 100049,China
6. Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China Hefei National Laboratory,University of Science and Technology of China,Hefei 230088,China
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摘要

关键词

germanium quantum wells/RP-CVD/multi-strained quantum wells/magneto-transport/hetero-structure

分类

通用工业技术

引用本文复制引用

Yiwen Zhang,Jun Deng,Zonghu Li,Xinyou Liu,Haiou Li,Baochuan Wang,Jun Luo,Zhenzhen Kong,Gang Cao,Guoping Guo,Chao Zhao,Guilei Wang..Growth,characterization,and transport calculation of Ge/SiGe heterojunction:strategy for the growth of undoped Ge quantum wells[J].Journal of Semiconductors,2024,45(12):P.62-70,9.

基金项目

supported by the Innovation Program for Quantum Science and Technology (Project ID.2021ZD0302301) （Project ID.2021ZD0302301）

the National Natural Science Foundation of China (Grant No.6240033549). （Grant No.6240033549）

Journal of Semiconductors

OACSTPCDEI

ISSN：1674-4926

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