广东工业大学学报2024，Vol.41Issue(6)：39-44,6.DOI:10.12052/gdutxb.240004
基于22 nm FDSOI RVT工艺的宽范围体偏置调节电路设计
Wide-range Body Bias Adjustment Circuit Design Based on 22 nm FDSOI RVT Process
摘要
Abstract
Leakage power consumption is a key issue in integrated circuit applications,and body bias adjustment technology is one of the most commonly used power consumption adjustment technologies.The traditional body bias adjustment circuit has problems such as small bias voltage range and multiple power supply voltages,which not only increases the cost of the entire system,but also limits the optimization effect of body bias adjustment technology.Based on the 22 nm FDSOI(Fully Depleted Silicon on Insulator)RVT(Regular Voltage Threshold)process,a wide-range body bias adjustment circuit suitable for 22 nm FDSOI RVT digital integrated circuits is proposed.This circuit has a programmable(0 V,±2 V)wide voltage output range,can achieve 50 mV bias voltage resolution,and does not require additional power input.The test circuit was implemented based on the 22 nm FDSOI process.The simulation results show that the body bias adjustment circuit proposed in this design can reduce the standby leakage of the test circuit by 34%to 92%and has a wide performance tracking range.关键词
22 nm FDSOI/体偏置调节/泄漏功耗/反向偏置Key words
22 nm FDSOI/body bias adjustment/leakage power/reverse body bias分类
信息技术与安全科学引用本文复制引用
蓝浩源,蔡述庭,熊晓明,王治安,张小辉,王建萍,郭金才,李建忠,李彬鸿..基于22 nm FDSOI RVT工艺的宽范围体偏置调节电路设计[J].广东工业大学学报,2024,41(6):39-44,6.基金项目
广东省重点领域研发计划资助项目(2022B0701180001) （2022B0701180001）
