新型炭材料（中英文）2024，Vol.39Issue(6)：1191-1201,11.DOI:10.1016/S1872-5805(24)60855-3
含碳化硅晶须的还原氧化石墨烯多孔电磁屏蔽薄膜及其多层结构
Reduced graphene oxide porous films containing SiC whiskers for constructing multilayer electromagnetic shields
李静 1祁奕铨 1赵诗翔 1邱汉迅 1杨俊和 1杨光智1
作者信息
- 1. 上海理工大学材料与化学学院,上海 200093
- 折叠
摘要
Abstract
Developing lightweight and flexible thin films for electromagnetic interference(EMI)shielding is of great importance.Porous thin films of reduced graphene oxide containing SiC whiskers(SiC@RGO)for EMI shielding were prepared by a two-step reduction of graphene oxide(GO),in which the two steps were chemical reduction by HI and the solid phase microwave irradiation.A significant increase of the film thickness from around 20 to 200 pm was achieved due to the formation of a porous structure by gases released during the 3 s of solid phase microwave irradiation.The total shielding effectiveness(SEr)and the reflective SE(SER)of the SiC@RGO porous thin films depended on the GO/SiC mass ratio.The highest SET achieved was 35.6 dB while the SER was only 2.8 dB,when the GO/SiC mass ratio was 4:1.The addition of SiC whiskers was critical for the multi-reflection,interfacial po-larization and dielectric attenuation of EM waves.A multilayer film with a gradient change of SE values was constructed using SiC@RGO porous films and multi-walled carbon nanotubes buckypapers.The highest SEr of the multilayer films reached 75.1 dB with a SER of 2.7 dB for a film thickness of about 1.5 mm.These porous SiC@RGO thin films should find use in multilayer or sand-wich structures for EMI absorption in packaging or lining.关键词
石墨烯/薄膜/碳化硅晶须/电磁屏蔽Key words
Graphene/Thin films/Silicon carbide whiskers/Electromagnetic interference shielding分类
化学化工引用本文复制引用
李静,祁奕铨,赵诗翔,邱汉迅,杨俊和,杨光智..含碳化硅晶须的还原氧化石墨烯多孔电磁屏蔽薄膜及其多层结构[J].新型炭材料（中英文）,2024,39(6):1191-1201,11.
