基于GaN肖特基二极管的大功率微波限幅技术研究OA

With the development of high-power microwave technology,strong electromagnetic technologies such as ultra-wideband and high power pose an increasing threat to electronic equipment.Using high-power microwaves to destroy electronic information equipment has become an important way to interfere with communication systems.The protection of high-power microwaves is mainly divided into front-door protection and back-door protection.As an important microwave device for front-door protection,the limiter is also facing higher and higher requirements.This paper first introduces the device characteristics and performance advantages of GaN materials and Schottky diodes,and then introduces the principle and circuit structure of the limiter based on semiconductor devices,and discusses the research progress of the new generation of high-power microwave limiting technology based on GaN Schottky diodes.