集成电路与嵌入式系统2025，Vol.25Issue(1)：1-11,11.DOI:10.20193/j.ices2097-4191.2024.0068
基于GaN肖特基二极管的大功率微波限幅技术研究
Research on high-power microwave limiter technology based on GaN Schottky diode
摘要
Abstract
With the development of high-power microwave technology,strong electromagnetic technologies such as ultra-wideband and high power pose an increasing threat to electronic equipment.Using high-power microwaves to destroy electronic information equipment has become an important way to interfere with communication systems.The protection of high-power microwaves is mainly divided into front-door protection and back-door protection.As an important microwave device for front-door protection,the limiter is also facing higher and higher requirements.This paper first introduces the device characteristics and performance advantages of GaN materials and Schottky diodes,and then introduces the principle and circuit structure of the limiter based on semiconductor devices,and discusses the research progress of the new generation of high-power microwave limiting technology based on GaN Schottky diodes.关键词
高功率微波技术/GaN二极管/大功率限幅器/自检波架构Key words
high-power micro wave technology/GaN barrier diodes/high-power limiter/self-detection architecture分类
电子信息工程引用本文复制引用
霍树栋,张正兴,郑梦晗,党魁,张进成,郝跃..基于GaN肖特基二极管的大功率微波限幅技术研究[J].集成电路与嵌入式系统,2025,25(1):1-11,11.基金项目
国家自然科学基金青年基金项目(62204195) （62204195）
江苏省重点研发计划项目(BE2022057-2). （BE2022057-2）
