集成电路与嵌入式系统2025，Vol.25Issue(1)：29-33,5.DOI:10.20193/j.ices2097-4191.2024.0067
国产化叠层电容工艺的失效机理与可靠性研究
Failure mechanism and reliability study of domestic stacked capacitor processes
王烁 1王静 1琚安安 1赵容 1孔泽斌1
作者信息
- 1. 上海航天技术基础研究所,上海 201109
- 折叠
摘要
Abstract
This work presents a failure analysis study on domestic operational amplifiers,revealing that the main cause of device failure is the short circuit of stacked MIS capacitors induced by process changes.Under low electric fields,the capacitors perform normally,but under high electric fields,Fowler-Nordheim tunneling and defect accumulation caused by hot electron collisions ultimately lead to capaci-tor short circuits.Using Sentaurus TCAD simulations,we verified the impact of doping atom concentration differences at the interface on the oxide layer growth rate and proposed process improvement recommendations to enhance the reliability of domestic chips.关键词
失效分析/多晶硅氧化/国产化工艺/掺杂扩散/电容击穿/Sentauru TCAD仿真Key words
failure analysis/polysilicon oxidation/domestic processes/dopant diffusion/capacitor breakdown/Sentaurus TCAD simulation分类
电子信息工程引用本文复制引用
王烁,王静,琚安安,赵容,孔泽斌..国产化叠层电容工艺的失效机理与可靠性研究[J].集成电路与嵌入式系统,2025,25(1):29-33,5.
