现代电子技术2025，Vol.48Issue(2)：14-20,7.DOI:10.16652/j.issn.1004-373x.2025.02.003
一款基于SiGe工艺的宽带射频驱动放大器
A broadband RF DA based on SiGe technology
张斌 1蒋颖丹 1权帅超 1汪柏康 1孙莎莎 1秦战明 1孙文俊1
作者信息
- 1. 中国电子科技集团第五十八研究所,江苏 无锡 214035
- 折叠
摘要
Abstract
In order to reduce the influence of temperature drift on amplifiers,a broadband RF driver amplifier(DA)with integrated temperature compensated DC bias network is designed by means of the theoretical analysis.In order to improve the gain and output power,the two-stage differential common emitter common base(cascode)structure is adopted,and a novel differential conversion single-ended Marchand balun is integrated into the output port.The circuit is designed based on the 0.18 μm Silicon Germanium(SiGe)BiCMOS high-performance heterojunction bipolar transistor(HBT)process.The electromagnetic simulation results show that in the frequency band range of 8～16 GHz,the gain of the amplifier is greater than 26 dB,the output 1 dB power single compression point is≥10 dBm,the saturation output power is≥13 dBm,the port return loss is≤-l0 dB,and the gain of the same frequency point within the range of-40℃to 125℃is≤1.5 dB.The performance of the designed DA is stable,and the working current of the 2.8 V power supply is 45 mA,and the circuit area is only 0.50 mm×0.58 mm,which can realize the design requirements of high performance and miniaturization of SiGe amplifier.关键词
驱动放大器/宽带射频/SiGe工艺/温度补偿/共射-共基极(cascode)结构/Marchand巴伦/异质结双极晶体管Key words
driver amplifier/broadband RF/SiGe process/temperature compensation/common emitter common base(casode)structure/Marchand balun/heterojunction bipolar transistor分类
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张斌,蒋颖丹,权帅超,汪柏康,孙莎莎,秦战明,孙文俊..一款基于SiGe工艺的宽带射频驱动放大器[J].现代电子技术,2025,48(2):14-20,7.
