现代电子技术2025，Vol.48Issue(2)：41-45,5.DOI:10.16652/j.issn.1004-373x.2025.02.007
功率循环下GaN器件栅极可靠性研究
Research on GaN device gate reliability under power cycling
郭世龙 1薛炳君 1严焱津 1汪文涛1
作者信息
- 1. 三峡大学 电气与新能源学院,湖北 宜昌 443000
- 折叠
摘要
Abstract
Gallium nitride(GaN)power devices have been operating under high power density conditions for a long time,and the reliability of their gates has always been the focus of attention,and the degradation of the gates can cause problems such as device mis-conduction and increased conduction loss.A DC power cycling device is designed to accelerate the device aging by means of power cycling.In order to evaluate the reliability of the gate,the threshold voltage(VTH)and the gate capacitance(CGS)are used as the characteristic parameters to design the VTH and CGS monitoring circuits.The temperature characteristics,recovery characteristics,and the degradation of the gate after 100 000 power cycles are investigated experimentally.The results indicate that,as the temperature increases,VTH can drift forward,with a drift amount exceeding 10%,while CGS can remain decoupled from temperature and remains unchanged.After the power cycle,the VTH of the device can recover more than 70%in the first 10 min,and can remain stable after 3 h.CGS do not have recovery characteristics.The characteristic parameters of the two selected GaNs can change in different degrees after 100 000 power cycles,which indicates that the gate can degenerate to some extent after the power cycle.Therefore,it is necessary to consider the degradation of gate performance caused by temperature and thermal stress impacts when designing devices and applications,and optimize the design process to improve the reliability of GaN devices.关键词
GaN器件/栅极可靠性/功率循环/阈值电压/栅极电容/加速老化Key words
GaN device/gate reliability/power cycling/threshold voltage/gate capacitance/accelerated aging分类
信息技术与安全科学引用本文复制引用
郭世龙,薛炳君,严焱津,汪文涛..功率循环下GaN器件栅极可靠性研究[J].现代电子技术,2025,48(2):41-45,5.
