Journal of Semiconductors2025，Vol.46Issue(1)：P.91-106,16.DOI:10.1088/1674-4926/24090020
Recent progress on elemental tellurium and its devices
Jiachi Liao 1Zhengxun Lai 2You Meng 3Johnny C.Ho4
作者信息
- 1. Department of Materials Science and Engineering,City University of Hong Kong,Kowloon,Hong Kong 999077,China
- 2. Changsha Semiconductor Technology and Application Innovation Research Institute,College of Semiconductors(College of IntegratedC ircuits),Hunan University,Changsha 410082,China
- 3. Department of Materials Science and Engineering,City University of Hong Kong,Kowloon,Hong Kong 999077,China Changsha Semiconductor Technology and Application Innovation Research Institute,College of Semiconductors(College of IntegratedC ircuits),Hunan University,Changsha 410082,China
- 4. Department of Materials Science and Engineering,City University of Hong Kong,Kowloon,Hong Kong 999077,China Institute for Materials Chemistry and Engineering,Kyushu University,Fukuoka 8168580,Japan State Key Laboratory of Terahertz and Millimeter Waves,City University of Hong Kong,Kowloon,Hong Kong 999077,China
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摘要
关键词
elemental tellurium/photodetector/field-effect transistor/gas sensor/energy harvesting device分类
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Jiachi Liao,Zhengxun Lai,You Meng,Johnny C.Ho..Recent progress on elemental tellurium and its devices[J].Journal of Semiconductors,2025,46(1):P.91-106,16.基金项目
supported by a fellowship award from the Research Grants Council of the Hong Kong Special Administrative Region,China(CityU RFS2021−1S04) （CityU RFS2021−1S04）
the Innovation and Technology Fund(MHP/044/23)from the Innovation and Technology Commission of the Hong Kong Government Special Administrative Region,China. （MHP/044/23）
