现代电子技术2025，Vol.48Issue(4)：34-39,6.DOI:10.16652/j.issn.1004-373x.2025.04.006
具有高K背栅的无电压回跳RC-IGBT静态特性研究
Research on static characteristics of snapback-free RC-IGBT with high K back gate
王楠 1徐勇根 1胡夏融1
作者信息
- 1. 西华大学 理学院,四川 成都 610039
- 折叠
摘要
Abstract
In allusion to the problem of high on-state voltage drop(Von)and the low breakdown voltage,a high permittivity(high K)back gate reverse conducting insulated gate bipolar transistor(HK-BG-RC-IGBT)device structure is proposed.Its characteristic is that the back gate dielectric located at the bottom collector is filled with HK.The HK dielectric increases the hole concentration around the back gate during the forward conduction,which not only eliminates the snapback-free,but also reduces Von.The simulation results show that,at high forward conduction current density(ICE=925 A/cm2),the Von of HK-BG-RC-IGBT is 1.71 V,which is 19.34%lower than that of the conventional RC-IGBT(C-RC-IGBT)and 13.20%lower than that of OXIde back gate RC-IGBT(OXI-BG-RC-IGBT).The HK dielectric enhances the electron accumulation around the BG in the blocking state,resulting in an increased breakdown voltage.The simulation results show that the breakdown voltage of the HK-BG-RC-IGBT is 1 312 V,which is increased by 44.18%compared with OXI-BG-RC-IGBT.In addition,the reverse Von of the HK-BG-RC-IGBT is reduced respectively by 13.85%and 43.43%compared with OXI-BG-RC-IGBT and C-RC-IGBT.Applying the proposed HK-BG-RC-IGBT to high-voltage and high-power electronic power systems can enhance the system reliability and reduce the loss.关键词
RC-IGBT/电压回跳/高介电常数/背栅/导通压降/阻断特性Key words
RC-IGBT/snapback-free/high permittivity(high K)/back gate/on-state voltage drop/blocking state分类
信息技术与安全科学引用本文复制引用
王楠,徐勇根,胡夏融..具有高K背栅的无电压回跳RC-IGBT静态特性研究[J].现代电子技术,2025,48(4):34-39,6.
