WGM Lasing from Toroid-shaped ZnO Microdisk Pivoted on SiOA北大核心
Although it has a significant advantage in gain properties,the lack of selective etching processes hinders ZnO lasing in on-chip applications.Herein,the circular ZnO microdisk pivoted on Si substrate is fabricated through depositing ZnO on patterned silicon on an insulator(SOI)substrate.The cavity structure,morphology,and photoluminescence(PL)properties are studied systematically.The cavity shows a well-defined circular structure with oxygen vacancies.Under the synergistic action of surface tension and stress,the ZnO microdisk shows a unique toroid structure with a high sidewall surface finish.The ZnO microcavity(8μm in diameter)shows optically pumped whispering gallery modes(WGMs)lasing in the ultraviolet region with a Q factor exceeding 1300.More interestingly,the quality of the toroid ZnO microdisk cavity is high enough to support the bandgap renormalization(BGR)phenomenon.With the increasing pumping power,the lasing spectra will be modulated.The lasing spectrum undergoes a Burstein-Moss(BM)effect-induced blueshift and an electron-hole plasma(EHP)effect-induced redshift.
ZHU Gangyi;YAN Xinyue;YE Peng;QIN Feifei;WANG Zixuan;LI Binghui;LU Junfeng;WANG Xiaoxuan;XU Chunxiang
College of Integrated Circuit Science and Engineering(College of Industry-Education Integration),Nanjing University of Posts and Telecommunications,Nanjing 210003,China GaN Optoelectronic Integration International Cooperation Joint Laboratory of Jiangsu Province,College of Telecommunications and Information Engineering,Nanjing University of Posts and Telecommunications,Nanjing 210003,ChinaGaN Optoelectronic Integration International Cooperation Joint Laboratory of Jiangsu Province,College of Telecommunications and Information Engineering,Nanjing University of Posts and Telecommunications,Nanjing 210003,ChinaGaN Optoelectronic Integration International Cooperation Joint Laboratory of Jiangsu Province,College of Telecommunications and Information Engineering,Nanjing University of Posts and Telecommunications,Nanjing 210003,ChinaGaN Optoelectronic Integration International Cooperation Joint Laboratory of Jiangsu Province,College of Telecommunications and Information Engineering,Nanjing University of Posts and Telecommunications,Nanjing 210003,ChinaCollege of Integrated Circuit Science and Engineering(College of Industry-Education Integration),Nanjing University of Posts and Telecommunications,Nanjing 210003,ChinaGaN Optoelectronic Integration International Cooperation Joint Laboratory of Jiangsu Province,College of Telecommunications and Information Engineering,Nanjing University of Posts and Telecommunications,Nanjing 210003,ChinaCollege of Physics,Nanjing University of Aeronautics and Astronautics,Nanjing 211106,ChinaCollege of Electronic Science and Engineering,Southeast University,Nanjing 210096,ChinaCollege of Electronic Science and Engineering,Southeast University,Nanjing 210096,China
电子信息工程
ZnOmicrodisktunable lasingmolecular beam epitaxy
《发光学报》 2025 (1)
P.12-22,11
国家自然科学基金(62404040,62204127)江苏省自然科学基金(BK20215093)江苏省双创博士项目资助基金(30644)发光学及应用国家重点实验室(SKLA-2021-04)省基础研究专项基金(自然科学基金)-面上项目(BK20241892,BK20221271)智能纳米材料与器件教育部开放基金NJ2020003(INMD-2021M11)。
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