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Realized stable BP-N at ambient pressure by phosphorus doping

Guo Chen Chengfeng Zhang Yuanqin Zhu Bingqing Cao Jie Zhang Xianlong Wang

Matter and Radiation at Extremes2025,Vol.10Issue(1):P.6-14,9.
Matter and Radiation at Extremes2025,Vol.10Issue(1):P.6-14,9.DOI:10.1063/5.0239841

Realized stable BP-N at ambient pressure by phosphorus doping

Guo Chen 1Chengfeng Zhang 1Yuanqin Zhu 1Bingqing Cao 1Jie Zhang 2Xianlong Wang1

作者信息

  • 1. Key Laboratory of Materials Physics,Institute of Solid State Physics,HFIPS,Chinese Academy of Sciences,Hefei 230031,China University of Science and Technology of China,Hefei 230026,China
  • 2. Key Laboratory of Materials Physics,Institute of Solid State Physics,HFIPS,Chinese Academy of Sciences,Hefei 230031,China
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摘要

关键词

doping/phosphorus/stability

分类

化学化工

引用本文复制引用

Guo Chen,Chengfeng Zhang,Yuanqin Zhu,Bingqing Cao,Jie Zhang,Xianlong Wang..Realized stable BP-N at ambient pressure by phosphorus doping[J].Matter and Radiation at Extremes,2025,10(1):P.6-14,9.

基金项目

supported by the National Natural Science Foundation of China(NSFC)under Grant No.U2030114 and the CASHIPS Director’s Fund(Grant No.YZJJ202207-CX). (NSFC)

Matter and Radiation at Extremes

2468-2047

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