电子学报2024，Vol.52Issue(12)：3907-3913,7.DOI:10.12263/DZXB.20240662
Si衬底上基于诱导成核技术的高质量GaN外延
High Quality GaN Epitaxy Based on Induced Nucleation Technology on Si Substrate
摘要
Abstract
GaN has excellent material properties such as direct bandgap,high frequency,high power,and high elec-tron mobility,making them have broad application prospects in fields such as power electronic devices and optoelectronic devices.Si substrates have advantages such as large size,low cost,and good process compatibility,so the GaN-on-Si has high research and commercial value.The crystal quality of GaN materials determines the performance of GaN based devic-es,but the crystal quality of GaN-on-Si is poor.So,researchers have proposed various methods to improve the crystal quali-ty of GaN,but all of them have problems such as complex processes or high costs.Therefore,this research proposes a sim-ple and low-cost induced nucleation technique to obtain high-quality Si based GaN materials.After completing the same dose of N ion implantation on Si substrate,rapid thermal annealing(RTA)treatment was carried out for different times,and epitaxial growth was carried out using metal organic chemical vapor deposition(MOCVD)method.The results showed that the sample with an annealing time of 6 minutes had the best crystal quality,surface morphology,and optical performance.Compared with the control sample,the screw dislocation density decreased by 14.7%,the edge dislocation density de-creased by 34.4%,the total dislocation density decreased by 26.1%,and the two-dimensional electron gas(2DEG)surface density and electron mobility at the AlGaN/GaN heterojunction interface were improved,which improved the electrical per-formance of the AlGaN/GaN heterojunction.关键词
氮化镓/诱导成核/快速热退火/金属有机化学气相沉积/位错密度/光学性能/电学性能Key words
gallium nitride/induced nucleation/rapid thermal annealing/metal organic chemical vapor deposition/dislocation density/optical performance/electrical performance分类
信息技术与安全科学引用本文复制引用
许钪,郝跃,许晟瑞,陶鸿昌,苏华科,高源,杨赫,安瑕,黄俊,张进成..Si衬底上基于诱导成核技术的高质量GaN外延[J].电子学报,2024,52(12):3907-3913,7.基金项目
国家自然科学基金(No.62074120) （No.62074120）
国家资助博士后研究人员计划(No.GZC20241306) （No.GZC20241306）
湖北省开发项目(No.2022BFE001) National Natural Science Foundation of China(No.62074120) （No.2022BFE001）
Postdoctoral Fellowship Program of CPSF(No.GZC20241306) （No.GZC20241306）
Local Science and Technology Development Project of Hubei Province(No.2022BFE001) （No.2022BFE001）
