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Electrolyte-gated optoelectronic transistors for neuromorphic applications

Jinming Bi Yanran Li Rong Lu Honglin Song Jie Jiang

半导体学报（英文版）2025，Vol.46Issue(2)：5-22,18.

半导体学报（英文版）2025，Vol.46Issue(2)：5-22,18.DOI:10.1088/1674-4926/24090042

Electrolyte-gated optoelectronic transistors for neuromorphic applications

Jinming Bi ¹Yanran Li ¹Rong Lu ¹Honglin Song ¹Jie Jiang²

作者信息

1. Hunan Key Laboratory of Nanophotonics and Devices,School of Physics,Central South University,Changsha 410083,China
2. Hunan Key Laboratory of Nanophotonics and Devices,School of Physics,Central South University,Changsha 410083,China||State Key Laboratory of Precision Manufacturing for Extreme Service Performance,College of Mechanical and Electrical Engineering,Central South University,Changsha 410083,China
折叠

摘要

关键词

neuromorphic computing/electrolyte-gated transistors/artificial synapses/optoelectronic devices

Key words

neuromorphic computing/electrolyte-gated transistors/artificial synapses/optoelectronic devices

引用本文复制引用

Jinming Bi,Yanran Li,Rong Lu,Honglin Song,Jie Jiang..Electrolyte-gated optoelectronic transistors for neuromorphic applications[J].半导体学报（英文版）,2025,46(2):5-22,18.

基金项目

This work is supported by the Hunan Science Fund for Distinguished Young Scholars(2023JJ10069),the National Natural Science Foundation of China(52172169),and the Project of State Key Laboratory of Precision Manufacturing for Extreme Service Performance,Central South University(ZZYJKT2024-02). （2023JJ10069）

半导体学报（英文版）

ISSN：1674-4926

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