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首页|期刊导航|半导体学报(英文版)|Ion-modulation optoelectronic neuromorphic devices:mechanisms,characteristics,and applications

Ion-modulation optoelectronic neuromorphic devices:mechanisms,characteristics,and applications

Xiaohan Meng Runsheng Gao Xiaojian Zhu Run-Wei Li

半导体学报(英文版)2025,Vol.46Issue(2):23-36,14.
半导体学报(英文版)2025,Vol.46Issue(2):23-36,14.DOI:10.1088/1674-4926/24100025

Ion-modulation optoelectronic neuromorphic devices:mechanisms,characteristics,and applications

Ion-modulation optoelectronic neuromorphic devices:mechanisms,characteristics,and applications

Xiaohan Meng 1Runsheng Gao 2Xiaojian Zhu 2Run-Wei Li2

作者信息

  • 1. CAS Key Laboratory of Magnetic Materials and Devices,Ningbo Institute of Materials Technology and Engineering,Chinese Academy of Sci-ences,Ningbo 315201,China||School of Physical Science and Technology,ShanghaiTech University,Shanghai 201210,China
  • 2. CAS Key Laboratory of Magnetic Materials and Devices,Ningbo Institute of Materials Technology and Engineering,Chinese Academy of Sci-ences,Ningbo 315201,China||Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology,Ningbo Institute of Materials Technology and Engineer-ing,Chinese Academy of Sciences,Ningbo 315201,China
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摘要

关键词

ion migration/optoelectronic modulation/optoelectronic device/neuromorphic computing/artificial vision system

Key words

ion migration/optoelectronic modulation/optoelectronic device/neuromorphic computing/artificial vision system

引用本文复制引用

Xiaohan Meng,Runsheng Gao,Xiaojian Zhu,Run-Wei Li..Ion-modulation optoelectronic neuromorphic devices:mechanisms,characteristics,and applications[J].半导体学报(英文版),2025,46(2):23-36,14.

基金项目

This work was supported by National Natural Science Foundation of China(62174164,U23A20568,and U22A2075),National Key Research and Development Project(2021YFA1202600),Talent Plan of Shanghai Branch,Chinese Academy of Sciences(CASSHB-QNPD-2023-022),Ningbo Tech-nology Project(2022A-007-C),and Ningbo Key Research and Development Project(2023Z021). (62174164,U23A20568,and U22A2075)

半导体学报(英文版)

1674-4926

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