半导体学报（英文版）2025，Vol.46Issue(2)：37-51,15.DOI:10.1088/1674-4926/24100020
Synaptic devices based on silicon carbide for neuromorphic computing
Synaptic devices based on silicon carbide for neuromorphic computing
Boyu Ye 1Xiao Liu 2Chao Wu 3Wensheng Yan 1Xiaodong Pi4
作者信息
- 1. Institute of Carbon Neutrality and New Energy,School of Electronics and Information,Hangzhou Dianzi University,Hangzhou 310018,China
- 2. Institute of Carbon Neutrality and New Energy,School of Electronics and Information,Hangzhou Dianzi University,Hangzhou 310018,China||State Key Laboratory of Polymer Materials Engineering,Sichuan University,Chengdu 610065,China
- 3. Sorbonne Université,Faculté des Sciences,CNRS,Institut Parisien de Chimie Moléculaire(IPCM),UMR 8232,4 Place Jussieu,75005 Paris,France
- 4. State key Laboratory of Silicon and Advanced Semiconductor Materials&School of Materials Science and Engineering,Zhejiang University,Hangzhou 310027,China||Institute of Advanced Semiconductors&Zhejiang Provincial Key Laboratory of Power Semiconductor Materials and Devices,ZJU-Hangzhou Global Scientific and Technological Innovation Center,Zhejiang University,Hangzhou 311200,China
- 折叠
摘要
关键词
silicon carbide/wide bandgap semiconductors/synaptic devices/neuromorphic computing/high temperatureKey words
silicon carbide/wide bandgap semiconductors/synaptic devices/neuromorphic computing/high temperature引用本文复制引用
Boyu Ye,Xiao Liu,Chao Wu,Wensheng Yan,Xiaodong Pi..Synaptic devices based on silicon carbide for neuromorphic computing[J].半导体学报（英文版）,2025,46(2):37-51,15.基金项目
This work is supported by the Natural Science Founda-tion of Zhejiang Province(Grant No.LQ24F040007),the National Natural Science Foundation of China(Grant No.U22A2075),and the Opening Project of State Key Laboratory of Polymer Materials Engineering(Sichuan University)(Grant No.sklpme2024-1-21). （Grant No.LQ24F040007）
