首页|期刊导航|半导体学报(英文版)|Deep-UV-photo-excited synaptic Ga2O3 nano-device with low-energy consumption for neuromorphic computing
半导体学报(英文版)2025,Vol.46Issue(2):87-96,10.DOI:10.1088/1674-4926/24050037
Deep-UV-photo-excited synaptic Ga2O3 nano-device with low-energy consumption for neuromorphic computing
Deep-UV-photo-excited synaptic Ga2O3 nano-device with low-energy consumption for neuromorphic computing
摘要
关键词
Ga2O3 nanowires/synaptic nano-device/low energy consumption/neural networkKey words
Ga2O3 nanowires/synaptic nano-device/low energy consumption/neural network引用本文复制引用
Liubin Yang,Xiushuo Gu,Min Zhou,Jianya Zhang,Yonglin Huang,Yukun Zhao..Deep-UV-photo-excited synaptic Ga2O3 nano-device with low-energy consumption for neuromorphic computing[J].半导体学报(英文版),2025,46(2):87-96,10.基金项目
This research was financially supported by the Key Research Program of Frontier Sciences,CAS(No.ZDBS-LY-JSC034),National Natural Science Foundation of China(No.62174172),China Postdoctoral Science Foundation(Nos.2023TQ0238 and 2023M742560),Basic Research Pilot Project of Suzhou(No.SSD2024003)and Jiangsu Key Disciplines of the Fourteenth Five-Year Plan(No.2021135).The authors are grateful for the technical support for Nano-X,Platform for Char-acterization&Test from Suzhou Institute of Nano-Tech and Nano-Bionics,Chinese Academy of Sciences(SINANO). (No.ZDBS-LY-JSC034)