首页|期刊导航|半导体学报（英文版）|Electropolymerized dopamine-based memristors using threshold switching behaviors for artificial current-activated spiking neurons

Electropolymerized dopamine-based memristors using threshold switching behaviors for artificial current-activated spiking neurons

Bowen Zhong Xiaokun Qin Zhexin Li Yiqiang Zheng Lingchen Liu Zheng Lou Lili Wang

半导体学报（英文版）2025，Vol.46Issue(2)：97-103,7.

半导体学报（英文版）2025，Vol.46Issue(2)：97-103,7.DOI:10.1088/1674-4926/24070007

Electropolymerized dopamine-based memristors using threshold switching behaviors for artificial current-activated spiking neurons

Bowen Zhong ¹Xiaokun Qin ¹Zhexin Li ¹Yiqiang Zheng ¹Lingchen Liu ¹Zheng Lou ¹Lili Wang¹

作者信息

1. State Key Laboratory for Superlattices and Microstructures,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China||Center of Materials Science and Optoelectronic Engineering,University of Chinese Academy of Sciences,Beijing 100049,China
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摘要

关键词

electropolymerization/polydopamine/memristor/threshold switching/spiking voltage/artificial neuron

Key words

electropolymerization/polydopamine/memristor/threshold switching/spiking voltage/artificial neuron

引用本文复制引用

Bowen Zhong,Xiaokun Qin,Zhexin Li,Yiqiang Zheng,Lingchen Liu,Zheng Lou,Lili Wang..Electropolymerized dopamine-based memristors using threshold switching behaviors for artificial current-activated spiking neurons[J].半导体学报（英文版）,2025,46(2):97-103,7.

基金项目

The authors sincerely acknowledge financial support from the Beijing Natural Science Foundation-Xiaomi Innova-tion Joint Fund(No.L233009),National Natural Science Foun-dation of China(NSFC Nos.62422409,62174152,and 62374159)and from the Youth Innovation Promotion Associa-tion of Chinese Academy of Sciences(No.2020115). （No.L233009）

半导体学报（英文版）

ISSN：1674-4926

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