高电压技术2025，Vol.51Issue(1)：21-30,中插2-中插3,12.DOI:10.13336/j.1003-6520.hve.20242023
自主可控的功率半导体器件仿真工具研发进展(一):二维计算的精度
Progress of Power Semiconductor Device Simulation Tool Development Part I:Accuracy of Two-dimensional Calculations
摘要
Abstract
Power semiconductor devices are the core of electrical energy conversion in power electronic equipment.As the world's largest consumer of power semiconductors,China faces a low self-sufficiency rate and a heavy reliance on imports,highlighting an urgent need for breakthroughs.Power semiconductor device simulation software,as an essential tool for multi-physics analysis and design optimization of devices,presents significant challenges in terms of high devel-opment complexity and low return on investment.Currently,almost all power semiconductor TCAD tools in use are developed by foreign companies such as Synopsys and Silvaco.Since 2019,the team has carried out the research and de-velopment work of power semiconductor device simulation tools.Based on the analysis of the physical models and solution difficulties of power semiconductor devices,this paper focuses on introducing the preliminary research progress of the two-dimensional simulation tool for power semiconductor devices,and conducts a detailed comparison with the calculation results of the world-leading commercial software Synopsys TCAD Sentaurus Device to verify the accuracy of the two-dimensional calculations.关键词
功率半导体器件/仿真工具/二维/漂移扩散模型/国产替代Key words
power semiconductor device/simulation tool/two dimension/drift-diffusion model/research progress引用本文复制引用
庄池杰,纪瑞朗,余占清,吴锦鹏,魏晓光,曾嵘,石清元,林波,彭晞雨,吴丹,刘志成,李立,施连军,任李鑫..自主可控的功率半导体器件仿真工具研发进展(一):二维计算的精度[J].高电压技术,2025,51(1):21-30,中插2-中插3,12.基金项目
国家自然科学基金集成项目(U2166602) （U2166602）
国家自然科学基金青年学生基础研究项目(博士研究生)(524B2107). Project supported by National Natural Science Foundation of China(U2166602,524B2107). （博士研究生）
