| 注册
首页|期刊导航|航空兵器|硅基异质结中波红外光电探测器的研究进展

硅基异质结中波红外光电探测器的研究进展

曾雨玲 冯松 马保科 何心怡 吴鉴洋 李浩杰

航空兵器2024,Vol.31Issue(6):36-43,8.
航空兵器2024,Vol.31Issue(6):36-43,8.DOI:10.12132/ISSN.1673-5048.2024.0164

硅基异质结中波红外光电探测器的研究进展

Research Progress of Silicon-Based Heterojunction Mid-Wave Infrared Photodetectors

曾雨玲 1冯松 1马保科 1何心怡 1吴鉴洋 1李浩杰1

作者信息

  • 1. 西安工程大学理学院,西安 710600
  • 折叠

摘要

Abstract

Mid-wave infrared photodetector is an important photoelectric detection equipment,which uses the pho-toelectric effect to convert infrared radiation into electrical signals.It is widely used in guidance,unmanned aerial vehi-cles,fighter jets and other platforms,and plays an important role in target detection,tracking and identification.Sili-con-based heterojunction mid-wave infrared photodetectors are based on silicon materials,combined with mature silicon device technology and infrared detection performance,and have the advantages of low cost,easy preparation and high integration,becoming an opportunity to break through the bottleneck of traditional silicon-based optoelectronic devices.With the continuous progress of research,silicon-based heterojunction mid-wave infrared photodetectors have made great progress in various aspects,bringing new opportunities and challenges to infrared photoelectric detection technolo-gy.In this paper,the research and development of new germanium/silicon,graphene/silicon and other silicon-based heterojunction mid-wave infrared photodetectors are discussed,and the advantages of detectors of different materials are analyzed and compared.

关键词

半导体器件/光电器件/探测器/中波红外/硅基异质结

Key words

semiconductor devices/optoelectronic devices/detector/mid-wave infrared/silicon-based hetero-junction

分类

军事科技

引用本文复制引用

曾雨玲,冯松,马保科,何心怡,吴鉴洋,李浩杰..硅基异质结中波红外光电探测器的研究进展[J].航空兵器,2024,31(6):36-43,8.

基金项目

国家重点研发计划项目(2018YFB2200500) (2018YFB2200500)

国家自然科学基金项目(61204080) (61204080)

国家重点实验室基金项目(SKL201804) (SKL201804)

陕西省重点研发计划项目(2022GY-012) (2022GY-012)

航空兵器

OA北大核心CSTPCD

1673-5048

访问量0
|
下载量0
段落导航相关论文