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二维电子材料中的二阶拓扑绝缘体

冯晓冉 牛成旺 黄柏标 戴瑛

物理学进展2025,Vol.45Issue(1):1-31,31.
物理学进展2025,Vol.45Issue(1):1-31,31.DOI:10.13725/j.cnki.pip.2025.01.001

二维电子材料中的二阶拓扑绝缘体

Second-Order Topological Insulators in 2D Electronic Materials

冯晓冉 1牛成旺 1黄柏标 1戴瑛1

作者信息

  • 1. 山东大学物理学院,晶体材料国家重点实验室,济南 250100
  • 折叠

摘要

Abstract

Higher-order band topology not only enriches our understanding of topological phases but also unveils pioneering lower-dimensional boundary states,which harbors substan-tial potential for next-generation device applications.The distinct electronic configurations and tunable attributes of two-dimensional materials position them as a quintessential platform for the realization of second-order topological insulators(SOTIs).This article provides an overview of the research progress in SOTIs within the field of two-dimensional electronic mate-rials,focusing on the characterization of higher-order topological properties and the numerous candidate materials proposed in theoretical studies.These endeavors not only enhance our understanding of higher-order topological states but also highlight potential material systems that could be experimentally realized.

关键词

二阶拓扑绝缘/角态/二维电子材料

Key words

second order topological insulator/corner state/2D electronic material

分类

数理科学

引用本文复制引用

冯晓冉,牛成旺,黄柏标,戴瑛..二维电子材料中的二阶拓扑绝缘体[J].物理学进展,2025,45(1):1-31,31.

基金项目

This work was supported by the National Natu-ral Science Foundation of China(Grants No.12174220 and No.12074217),the Shandong Provincial Science Foundation for Excellent Young Scholars(Grant No.ZR2023YQ001),the Taishan Young Scholar Program of Shandong Province,and the Qilu Young Scholar Pro-gram of Shandong University. (Grants No.12174220 and No.12074217)

物理学进展

OA北大核心

1000-0542

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