Nano Research2025，Vol.18Issue(2)：P.887-895,9.DOI:10.26599/NR.2025.94907129
Growth modes ofβ-Ga_(2)O_(3)on h-BN:Remote epitaxy and van der Waals epitaxy
Yiming Shi 1Junhua Meng 2Zhengchang Xia 3Jidong Huang 3Wenkang Liu 2Ji Jiang 3Zhigang Yin 3Jinxiang Deng 2Xingwang Zhang3
作者信息
- 1. School of Physics and Optoelectronic Engineering,Beijing University of Technology,Beijing 100124,China Key Lab of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China
- 2. School of Physics and Optoelectronic Engineering,Beijing University of Technology,Beijing 100124,China
- 3. Key Lab of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100049,China
- 折叠
摘要
关键词
β-Ga_(2)O_(3)/h-BN/remote epitaxy/van der Waals epitaxy/heterostructures分类
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Yiming Shi,Junhua Meng,Zhengchang Xia,Jidong Huang,Wenkang Liu,Ji Jiang,Zhigang Yin,Jinxiang Deng,Xingwang Zhang..Growth modes ofβ-Ga_(2)O_(3)on h-BN:Remote epitaxy and van der Waals epitaxy[J].Nano Research,2025,18(2):P.887-895,9.基金项目
This work was financially supported by the National Natural Science Foundation of China(Nos.62174009 and 62274151). （Nos.62174009 and 62274151）
