电源学报2025，Vol.23Issue(1)：209-218,10.DOI:10.13234/j.issn.2095-2805.2025.1.209
用于提高GaN基电路振荡稳定性的驱动优化研究
Research on Driving Optimization for Improving Oscillation Stability of GaN-based Circuits
摘要
Abstract
Compared with the traditional silicon(Si)devices,the gallium nitride(GaN)devices have lower parasitic parameters,a faster switching speed and a smaller on-resistance,which will easily lead to the phenomenon of continuous oscillation during their switching-on process and further result in the circuit instability.Therefore,it is necessary to suppress this phenomenon in practical circuits.Under this background,a negative conductance model of a bridge circuit under the conventional driving scheme is established at first,and the oscillation stability of the circuit is analyzed.Then,by adding optimization to the conventional driving scheme,the corresponding negative conductance model is established.The optimization schemes of series damping represented by changing the resistance and adding ferrite beads and those of parallel low impedance represented by adding RC snubber are selected,respectively.With this model,the influence of adding the driving optimization schemes on the oscillation stability of the circuit can be identified,and the changes in the stability before and after the addition were verified by experimental results,providing a reference for the driving circuit to select its appropriate driving optimization scheme.关键词
GaN/负电导模型/振荡/稳定性/驱动优化Key words
GaN/negative conductance model/oscillation/stability/driving optimization分类
信息技术与安全科学引用本文复制引用
张楠,李艳,赵方玮..用于提高GaN基电路振荡稳定性的驱动优化研究[J].电源学报,2025,23(1):209-218,10.基金项目
国家自然科学基金面上资助项目(51877007)This work is supported by National Natural Science Foundation of China under the grant 51877007 （51877007）
