电源学报2025，Vol.23Issue(1)：219-228,10.DOI:10.13234/j.issn.2095-2805.2025.1.219
用于SiC MOSFET短路保护的平面型差分罗氏线圈建模与设计方法
Modeling and Designing Method for Planar Differential Rogowski Coil for SiC MOSFET Short-circuit Protection
摘要
Abstract
With the development of wide band gap devices,SiC MOSFET has been widely applied,and the research on its short-circuit protection has become an important topic to ensure the reliability of power electronic equipment.In view of the short short-circuit withstand time of SiC MOSFET and the difficulty in short-circuit fault protection,a short-circuit detection method for SiC MOSFET based on a planar differential Rogowski coil is proposed,which realizes a rapid identification of short-circuit fault by measuring the drain source current of the circuit and has advantages such as a fast response speed,a strong anti-interference capability and complete isolation from the main circuit.First,the working process of the SiC MOSFET short-circuit detection method based on the planar Rogowski coil is introduced.The partial element equivalent circuit(PEEC)modeling method for planar Rogowski coil is studied in detail,and an equivalent model which can reflect the coil's high-frequency characteristics is obtained.At the same time,the influence of the geometric structure of the planar Rogowski coil on its performance is analyzed,and an optimal design scheme considering both the high gain and high bandwidth is proposed.Aimed at the problem of low measurement accuracy of the Rogowski coil in an environ-ment with strong electromagnetic interference,a scheme of using the differential coil is put forward to improve the anti-interference performance.Finally,the anti-interference per-formance of the designed planar differential Rogowski coil and the reliability of short-circuit protection method based on this coil were verified by experimental results.关键词
SiC MOSFET/短路保护/平面型罗氏线圈/部分元等效电路建模/线圈设计Key words
SiC MOSFET/short-circuit protection/planar Rogowski coil/partial element equivalent circuit(PEEC)modeling/coil design分类
信息技术与安全科学引用本文复制引用
李腾,辛振,石亚飞,薛聚..用于SiC MOSFET短路保护的平面型差分罗氏线圈建模与设计方法[J].电源学报,2025,23(1):219-228,10.基金项目
国家自然科学基金青年基金资助项目(51907048)This work is supported by the Youth Program of National Natural Science Foundation of China under the grant 51907048 （51907048）
