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首页|期刊导航|中国光学(中英文)|波导/势垒界面插入GaInP和GaAsP对InAlGaAs量子阱808-nm激光二极管载流子泄漏的影响

波导/势垒界面插入GaInP和GaAsP对InAlGaAs量子阱808-nm激光二极管载流子泄漏的影响

付梦洁 董海亮 贾志刚 贾伟 梁建 许并社

中国光学(中英文)2025,Vol.18Issue(1):186-197,12.
中国光学(中英文)2025,Vol.18Issue(1):186-197,12.DOI:10.37188/CO.EN-2024-0006

波导/势垒界面插入GaInP和GaAsP对InAlGaAs量子阱808-nm激光二极管载流子泄漏的影响

Effect of GaInP and GaAsP inserted into waveguide/barrier interface on carrier leakage in InAlGaAs quantum well 808-nm laser diode

付梦洁 1董海亮 2贾志刚 1贾伟 2梁建 3许并社4

作者信息

  • 1. 太原理工大学新材料界面科学与工程教育部重点实验室,山西太原 030024
  • 2. 太原理工大学新材料界面科学与工程教育部重点实验室,山西太原 030024||山西浙大新材料与化工研究院,山西太原 030024
  • 3. 太原理工大学材料科学与工程学院,山西太原 030024
  • 4. 太原理工大学新材料界面科学与工程教育部重点实验室,山西太原 030024||山西浙大新材料与化工研究院,山西太原 030024||陕西科技大学原子与分子科学研究所,陕西西安 710021
  • 折叠

摘要

Abstract

There is nonradiative recombination in waveguide region owing to severe carrier leakage,which in turn reduces output power and wall-plug efficiency.In this paper,we designed a novel epitaxial structure,which suppresses carrier leakage by inserting n-Ga0.55In0.45P and p-GaAs0.6P0.4 between barriers and wave-guide layers,respectively,to modulate the energy band structure and to increase the height of barrier.The results show that the leakage current density reduces by 87.71%,compared to traditional structure.The non-radiative recombination current density of novel structure reduces to 37.411 A/cm2,and the output power reaches 12.80 W with wall-plug efficiency of 78.24%at an injection current density 5 A/cm2 at room temper-ature.In addition,the temperature drift coefficient of center wavelength is 0.206 nm/℃ at the temperature range from 5 ℃ to 65 ℃,and the slope of fitted straight line of threshold current with temperature variation is 0.00113.The novel epitaxial structure provides a theoretical basis for achieving high-power laser diode.

关键词

808-nm激光二极管/Ga0.55In0.45P和GaAs0.6P0.4插入层/InAlGaAs量子阱/载流子泄漏

Key words

808-nm laser diode/Ga0.55In0.45P and GaAs0.6P0.4 insertion layers/InAlGaAs quantum well/carri-er leakage

分类

电子信息工程

引用本文复制引用

付梦洁,董海亮,贾志刚,贾伟,梁建,许并社..波导/势垒界面插入GaInP和GaAsP对InAlGaAs量子阱808-nm激光二极管载流子泄漏的影响[J].中国光学(中英文),2025,18(1):186-197,12.

基金项目

国家自然科学基金(No.61904120,No.21972103) (No.61904120,No.21972103)

山西省"1331项目"和山西浙大新材料与化工研究院项目(No.2022SX-TD018,No.2021SX-AT001,002 和 003)Supported by National Natural Science Foundation of China(No.61904120,No.21972103) (No.2022SX-TD018,No.2021SX-AT001,002 和 003)

Shanxi"1331 project"and the Shanxi-Zheda Institute of Advanced Materials and Chemical Engineering(No.2022SX-TD018,No.2021SX-AT001,002 and 003) (No.2022SX-TD018,No.2021SX-AT001,002 and 003)

中国光学(中英文)

OA北大核心

2095-1531

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