首页|期刊导航|Fundamental Research|A review of GaN RF devices and power amplifiers for 5G communication applications

A review of GaN RF devices and power amplifiers for 5G communication applications

Hao Lu Meng Zhang Ling Yang Bin Hou Rafael Perez Martinez Minhan Mi Jiale Du Longge Deng Mei Wu Srabanti Chowdhury Xiaohua Ma Yue Hao

Fundamental Research2025，Vol.5Issue(1)：P.315-331,17.

Fundamental Research2025，Vol.5Issue(1)：P.315-331,17.DOI:10.1016/j.fmre.2023.11.005

A review of GaN RF devices and power amplifiers for 5G communication applications

Hao Lu ¹Meng Zhang ¹Ling Yang ¹Bin Hou ¹Rafael Perez Martinez ²Minhan Mi ¹Jiale Du ¹Longge Deng ¹Mei Wu ¹Srabanti Chowdhury ²Xiaohua Ma ¹Yue Hao¹

作者信息

1. School of Microelectronics,Xidian University,Xi''an 710071,China
2. Department of Electrical Engineering,Stanford University,Stanford,CA 94305,USA
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摘要

关键词

5G/Gallium nitride/High frequency/High linearity/GaN-on-Si HEMTs

分类

信息技术与安全科学

引用本文复制引用

Hao Lu,Meng Zhang,Ling Yang,Bin Hou,Rafael Perez Martinez,Minhan Mi,Jiale Du,Longge Deng,Mei Wu,Srabanti Chowdhury,Xiaohua Ma,Yue Hao..A review of GaN RF devices and power amplifiers for 5G communication applications[J].Fundamental Research,2025,5(1):P.315-331,17.

基金项目

supported by the National Natural Science Foundation of China(62234009,62090014,62404165,and 62474135) （62234009,62090014,62404165,and 62474135）

the Natural Science Basic Research Program of Shaanxi(2024JC-YBQN-0611) （2024JC-YBQN-0611）

the Stanford Graduate Fellowship(SGF) （SGF）

the China Postdoctoral Science Foundation(2023M732730) （2023M732730）

Postdoctoral Fellowship Program of CPSF(GZB20230557) （GZB20230557）

the Fundamental Research Funds for the Central Universities of China(XJSJ23056,XJSJ23047,andZDRC2002). （XJSJ23056,XJSJ23047,andZDRC2002）

Fundamental Research

ISSN：2096-9457

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