首页|期刊导航|半导体学报（英文版）|Achieving over 95％yield of sub-1 ppm BER with retention over 10 years at 125 ℃ and endurance of 1×1012 cycles towards automotive non-volatile RAM applications
Achieving over 95％yield of sub-1 ppm BER with retention over 10 years at 125 ℃ and endurance of 1×1012 cycles towards automotive non-volatile RAM applications
Dinggui Zeng Weiming He Baoyu Xiong Jia Hou Jichao Li Wei Fang Qiang Dai Yaohua Wang Shikun He Fantao Meng Ruofei Chen Yang Gao Yihui Sun Junlu Gong Yongzhao Peng Qijun Guo Zhixiao Deng
半导体学报（英文版）2025，Vol.46Issue(3)：74-80,7.
半导体学报（英文版）2025，Vol.46Issue(3)：74-80,7.
Achieving over 95％yield of sub-1 ppm BER with retention over 10 years at 125 ℃ and endurance of 1×1012 cycles towards automotive non-volatile RAM applications
Achieving over 95％yield of sub-1 ppm BER with retention over 10 years at 125 ℃ and endurance of 1×1012 cycles towards automotive non-volatile RAM applications
摘要
关键词
magnetic random access memory(MRAM)/non-volatile RAM(nvRAM)/magnetic tunnel junction(MTJ)/sub-1 ppm array yield/reliabilityKey words
magnetic random access memory(MRAM)/non-volatile RAM(nvRAM)/magnetic tunnel junction(MTJ)/sub-1 ppm array yield/reliability引用本文复制引用
Dinggui Zeng,Weiming He,Baoyu Xiong,Jia Hou,Jichao Li,Wei Fang,Qiang Dai,Yaohua Wang,Shikun He,Fantao Meng,Ruofei Chen,Yang Gao,Yihui Sun,Junlu Gong,Yongzhao Peng,Qijun Guo,Zhixiao Deng..Achieving over 95％yield of sub-1 ppm BER with retention over 10 years at 125 ℃ and endurance of 1×1012 cycles towards automotive non-volatile RAM applications[J].半导体学报（英文版）,2025,46(3):74-80,7.基金项目
This work is supported by National Science and Technol-ogy Major Project(2020AAA0109003).We also acknowledge the support from Hangzhou Innovation Team Program(TD2022018).The authors are grateful for the support from Hik-stor's MRAM manufacturing pilot line. （2020AAA0109003）
