半导体学报（英文版）2025，Vol.46Issue(3)：106-112,7.
High quality 6-inch single-crystalline AlN template for E-mode HEMT power device
High quality 6-inch single-crystalline AlN template for E-mode HEMT power device
Zhiwen Liang 1Qi Wang 2Shengqiang Zhou 3Kai Kang 4Jincheng Zhang 5Yue Hao 5Xinqiang Wang 6Shangfeng Liu 7Ye Yuan 1Tongxin Lu 8Xiaopeng Li 1Zirong Wang 4Neng Zhang 4Tai Li 8Xiangdong Li9
作者信息
- 1. Songshan Lake Materials Laboratory,Dongguan 523808,China
- 2. Dongguan Institute of Opto-Electronics Peking University,Dongguan 523808,China
- 3. Helmholtz-Zentrum Dresden-Rossendorf,Institute of Ion Beam Physics and Materials Research,Bautzner Landstrasse 400,01328,Dresden,Germany
- 4. Sinopatt.Technology Co.,Ltd,Songshan Lake,Dongguan 523808,China
- 5. Guangzhou Wide Bandgap Semiconductor Innovation Center,Guangzhou Institute of Technology,Xidian University,Guangzhou 510555,China||State Key Laboratory of Wide Bandgap Semiconductor Devices and Integrated Technology,School of Microelectronics,Xidian University,Xi'an 710071,China
- 6. Songshan Lake Materials Laboratory,Dongguan 523808,China||Dongguan Institute of Opto-Electronics Peking University,Dongguan 523808,China||State Key Laboratory of Artificial Microstructure and Mesoscopic Physics,School of Physics,Nano-Optoelectronics Frontier Center of Ministry of Education(NFC-MOE),Peking University,Beijing 100871,China
- 7. Songshan Lake Materials Laboratory,Dongguan 523808,China||School of Physical Sciences,Great Bay University,Dongguan 523808,China||State Key Laboratory of Artificial Microstructure and Mesoscopic Physics,School of Physics,Nano-Optoelectronics Frontier Center of Ministry of Education(NFC-MOE),Peking University,Beijing 100871,China
- 8. Songshan Lake Materials Laboratory,Dongguan 523808,China||State Key Laboratory of Artificial Microstructure and Mesoscopic Physics,School of Physics,Nano-Optoelectronics Frontier Center of Ministry of Education(NFC-MOE),Peking University,Beijing 100871,China
- 9. Guangzhou Wide Bandgap Semiconductor Innovation Center,Guangzhou Institute of Technology,Xidian University,Guangzhou 510555,China
- 折叠
摘要
关键词
single-crystalline/allium nitride/template/E-mode HEMTKey words
single-crystalline/allium nitride/template/E-mode HEMT引用本文复制引用
Zhiwen Liang,Qi Wang,Shengqiang Zhou,Kai Kang,Jincheng Zhang,Yue Hao,Xinqiang Wang,Shangfeng Liu,Ye Yuan,Tongxin Lu,Xiaopeng Li,Zirong Wang,Neng Zhang,Tai Li,Xiangdong Li..High quality 6-inch single-crystalline AlN template for E-mode HEMT power device[J].半导体学报（英文版）,2025,46(3):106-112,7.基金项目
This work was supported by the National Key R&D Pro-gram of China(No.2022YFE0140100)and the National Natu-ral Science Foundation of China(Nos.52273271 and 62321004).The work was also partly supported by the Key R&D Program of Guangdong Province(No.2020B01074003).The RBS measurements were carried out at the Ion Beam Cen-ter in Helmholtz-Zentrum Dresden-Rossendorf. （No.2022YFE0140100）
