| 注册
首页|期刊导航|Journal of Changshu Institute of Technology|基于范德华层状晶体CuInP2S6的宽工作温度范围紫外光电探测器件研究

基于范德华层状晶体CuInP2S6的宽工作温度范围紫外光电探测器件研究

陈梦瑶 陈禹行 罗中慎 陈阳 房勇 韩志达 王顺

Journal of Changshu Institute of Technology2025,Vol.39Issue(2):1-6,6.
Journal of Changshu Institute of Technology2025,Vol.39Issue(2):1-6,6.

基于范德华层状晶体CuInP2S6的宽工作温度范围紫外光电探测器件研究

Wide Operating Temperature Range UV Photodetector Based on van der Waals Layered Crystal CuInP2S6

陈梦瑶 1陈禹行 1罗中慎 2陈阳 2房勇 3韩志达 3王顺1

作者信息

  • 1. 常熟理工学院电子信息工程学院,江苏 常熟 215500
  • 2. 苏州大学 物理科学与技术学院,江苏 苏州 215000
  • 3. 常熟理工学院电子信息工程学院,江苏 常熟 215500||常熟理工学院江苏省新型功能材料重点建设实验室,江苏 常熟 215500
  • 折叠

摘要

Abstract

Multielement van der Waals(vdW)layered materials,with their rich structural and physical properties,offer numerous possibilities for expanding two-dimensional(2D)material-based optoelectronic devices.This work systematically investigates the photodetection performance of the quaternary vdW metal thiophosphate CuInP2S6.The device exhibits excellent photo-response to 405 nm ultraviolet light,achieving a photo-responsivity of 0.22 mA/W.Notably,the optical absorption and ionic conductivity of CuInP2S6 exhibit temperature dependence,manifesting even superior optoelectronic properties at high temperature(77℃).In summary,this study provides a new paradigm for achieving stable operation of optoelectronic devices under extreme circumstances and contributes to further developments of multifunctional applications of 2D semiconductors.

关键词

金属磷硫化物/层状材料/CuInP2S6/光电探测/高温器件

Key words

metal thiophosphates/layered materials/CuInP2S6/photodetection/high-temperature devices

分类

数理科学

引用本文复制引用

陈梦瑶,陈禹行,罗中慎,陈阳,房勇,韩志达,王顺..基于范德华层状晶体CuInP2S6的宽工作温度范围紫外光电探测器件研究[J].Journal of Changshu Institute of Technology,2025,39(2):1-6,6.

Journal of Changshu Institute of Technology

1008-2794

访问量5
|
下载量0
段落导航相关论文