集成电路与嵌入式系统2025，Vol.25Issue(3)：54-58,5.DOI:10.20193/j.ices2097-4191.2024.0061
T型栅PMOS器件跨导双峰效应的研究
Study on modeling of transconductance bimodal effect in T-gate PMOS
彭宏伟 1赵小寒 1陈祎纯 1陈睿凌 1王青松 1徐大为1
作者信息
- 1. 中国电子科技集团第五十八研究所,无锡 214035
- 折叠
摘要
Abstract
T-gate PMOS devices are increasingly essential in RFSOI circuits due to their remarkable radiation resistance and low parasitic capacitance.Conductance is a key parameter for MOS devices.However,the conductance of T-gate PMOS devices exhibits a double-peak effect as the gate voltage increases,affecting the judgment of circuit development.In this paper,the internal mechanism of the double-peak effect of the conductance of T-gate PMOS devices is thoroughly analyzed by combining experimental data and 3D TCAD simulation results.The influence of the double-peak effect on the conductance is discussed from the perspectives of temperature,main gate size,and sub-gate size.Finally,based on the layout structure of the T-gate PMOS device,an improved result is proposed to sup-press the double-peak effect.The proposed solution has been verified by simulation and wafer test and can be highly applicable to the cir-cuit design of T-gate PMOS structures in the SOI process.关键词
T型栅PMOS/跨导双峰效应/SOI/TCADKey words
T-gate PMOS/transconductance bimodal effect/SOI/TCAD分类
电子信息工程引用本文复制引用
彭宏伟,赵小寒,陈祎纯,陈睿凌,王青松,徐大为..T型栅PMOS器件跨导双峰效应的研究[J].集成电路与嵌入式系统,2025,25(3):54-58,5.
