电气传动2025，Vol.55Issue(3)：35-42,8.DOI:10.19457/j.1001-2095.dqcd25387
IGBT栅极振荡机理与抑制方法研究
Research of IGBT Gate Oscillation Mechanism and Suppression Methods
摘要
Abstract
The rapid development of modern power electronics technology promotes the insulated gate bipolar transistor(IGBT)wide range of applications in the AC motor drive,inverter,switching power supply and new energy industry.In the application process of IGBT,due to the complex and varied circuit topology and system conditions,the problem of gate waveform oscillation usually exists.How to understand the oscillation mechanism and suppress methods becomes the basis of IGBT security and stability application.According to the IGBT internal parasitic parameter structure and switching process,the IGBT gate turn-on oscillation,turn-off oscillation and short-circuit oscillation were introduced in detail,the mathematical model of the gate oscillation process and the oscillation of the radio frequency(RF)positive feedback oscillation(turn-off oscillation and short-circuit oscillation)were deduced.The corrective measures of adding negative feedback or decreasing the positive feedback gain were put forward.By improving the experiment of different oscillations,the effectiveness of the suppression measures was verified,and the stability and reliability of IGBT application were improved.关键词
绝缘栅双极型晶体管(IGBT)/栅极振荡机理/抑制方法/正反馈Key words
insulated gate bipolar transistor(IGBT)/gate oscillation mechanism/suppression methods/positive feedback分类
动力与电气工程引用本文复制引用
张浚坤,雷二涛,金莉,马凯,夏晨阳,王茜睿..IGBT栅极振荡机理与抑制方法研究[J].电气传动,2025,55(3):35-42,8.基金项目
南方电网重点科研项目(GDKJXM20212014) （GDKJXM20212014）
