华中科技大学学报（自然科学版）2025，Vol.53Issue(3)：135-141,7.DOI:10.13245/j.hust.250189
自适应逐周期逼近型SiC MOSFET栅极驱动芯片
Adaptive successive approximation SiC MOSFET active gate driver
摘要
Abstract
In order to suppress the current overshoot during the turn-on process of silicon carbide metal oxide semiconductor field effect transistors(SiC MOSFET),an adaptive successive approximation active gate driver for SiC MOSFETs was presented.Through an analysis of the turn-on process of SiC MOSFETs,the mechanism of current overshoot was summarized,and a solution for suppressing current overshoot was proposed.The proposed driver detected the gate voltage and drain-source voltage to determine the turn-on stage of the SiC MOSFET,and implemented a three-stage current control to reduce the overshoot current while limiting the drain-source voltage slew rate(d V/dt)to a safe level.By using adaptive cycle by cycle approximation feedback control technology,the control delay of the feedback loop was compensated,and the current switching point can be adaptively adjusted according to the working conditions.The 180 nm BCDprocess from DB HiTek was adopted,with an effective chip area of 2 300 μm×2 100 μm.Simulation results show that,compared to conventional gate drivers,under the same d V/dt conditions,there is a reduction of 13.7%in current overshoot and a decrease of 38%in turn-on loss.关键词
碳化硅金属氧化物半导体场效应晶体管(SiC MOSFET)/有源栅极驱动/自适应/电流过冲/开通损耗/逐周期逼近Key words
semiconductor field effect transistors(SiC MOSFET)/active gate driver/adaptive/current overshoot/turn-on loss/successive approximation分类
信息技术与安全科学引用本文复制引用
张烁,周清越,李超,陈伟铭,刘畅,童乔凌..自适应逐周期逼近型SiC MOSFET栅极驱动芯片[J].华中科技大学学报（自然科学版）,2025,53(3):135-141,7.基金项目
国家电网有限公司科技项目(5500-202321512A-3-2-ZN) （5500-202321512A-3-2-ZN）
面向碳化硅器件的自适应多段式驱动芯片关键技术研究. （）
