强激光与粒子束2025，Vol.37Issue(3)：1-12,12.DOI:10.11884/HPLPB202537.240406
具有快前沿的10 kV纳秒级脉冲电源的研制
Development of 10 kV nanosecond pulse power supply with fast leading edge
摘要
Abstract
With the development of fast switching characteristics of SiC MOSFET devices,they are widely used in circuit systems that require high-speed and flexible high-voltage pulse output.Studies have shown that the on-time of SiC MOSFETs is mainly affected by the gate drive technology and its implementation.Accordingly,related studies have mostly focused on the optimization of its gate drive method.In this study,a SiC MOSFET gate drive circuit was parametrically tested and optimized,and applied to ultra-fast conduction SiC MOSFET devices to achieve a significant reduction in on-time.To verify the optimization effect,the research team designed and prepared an optimized prototype of the gate boost driver for experimental testing.The test data show that the optimized gate drive voltage regulation method effectively improves the device performance,with a pulse voltage rising edge time of up to 27 ns under 10 kV voltage level and 50 A current conditions.关键词
固态开关串联/驱动回路参数优化/快前沿/SiC MOSFETKey words
solid-state switching in series/driving loop parameter optimization/fast front/SiC MOSFET分类
信息技术与安全科学引用本文复制引用
王亿明,王凌云,张东东,周媛,王志强,刘征,孔佑军..具有快前沿的10 kV纳秒级脉冲电源的研制[J].强激光与粒子束,2025,37(3):1-12,12.基金项目
国家自然科学基金项目(92166106) （92166106）
