β相氧化镓p型导电研究进展OA北大核心

β phase gallium oxide(β-Ga2O3)is an ideal semiconductor material for power devices based on its ultra-wide bandgap,high breakdown electric field,and easy preparation.However,it is still challenging to realize p-type doping of the β-Ga2O3 because of its relatively low energy of valence band maximum(VBM)and flat band dispersion near the VBM,which limits the development of p-n junctions and bipolar transistors.The main strategies for the p-type doping of β-Ga2O3 in recent research are based on size effect,defect regulation,non-equilibrium dynamic process,and solid solution.For the β-Ga2O3 p-n homojunction and heterojunction,improving crystal quality and reducing the interface defect states are the key issues for optimizing devices'performances.This paper focuses on the p-type conductivity problem of β-Ga2O3,systematically reviews the electronic structure of β-Ga2O3,the experimental characterization and theoretical calculation method of doping levels,the reasons for p-type doping difficulty,and the breakthrough in research advancements for improving the p-type doping ofβ-Ga2O3.Finally,the relevant studies on the β-Ga2O3 p-n homojunction and heterojunction devices are briefly reviewed.It requires further exploration to realize p-type doping of bulk-phase β-Ga2O3 through complex-defect regulation,non-equilibrium dynamics,solid solution,and combining these schemes.The device performances of p-n homojunction and heterojunction also need further optimization.