人工晶体学报2025，Vol.54Issue(2)：190-196,7.DOI:10.16553/j.cnki.issn1000-985x.2024.0301
垂直布里奇曼法生长氧化镓单晶及其性能表征
Growth and Properties of β-Ga2O3 Single Crystal by Vertical Bridgman Method
摘要
Abstract
Using a self-designed vertical Bridgman(VB)furnace,a growth furnace model was established through dynamic simulation and experimental deep coupling iterative optimization method.The optimal temperature field of the growth furnace was obtained by optimizing the temperature field,and the actual temperature field was optimized and modified based on the simulated optimal temperature field.3-inch(1 inch=2.54 cm)diameter gallium oxide(β-Ga2O3)single crystal was successfully grown in this paper.2.5 inch(100)plane β-Ga2O3 wafers were successfully fabricated from the as-grown crystal.The crystalline quality and optical properties of β-Ga2O3 crystal were characterized and tested.The test results indicate that,the β-Ga2O3 crystal has high crystalline quality,with cut-off edges of ultraviolet for(100)plane is 257.5 nm,corresponding to an optical bandgap of 4.78 eV.The Laue diffraction spots of the crystal are clear and symmetrical,with a minimum full width at half maximum(FWHM)of the rocking curve at 39.6″.关键词
β-Ga2O3/垂直布里奇曼法/晶体生长/高结晶质量/宽禁带半导体Key words
β-Ga2O3/vertical Bridgman method/crystal growth/high crystalline quality/wide bandgap semiconductor分类
数理科学引用本文复制引用
黄东阳,黄浩天,潘明艳,徐子骞,贾宁,齐红基..垂直布里奇曼法生长氧化镓单晶及其性能表征[J].人工晶体学报,2025,54(2):190-196,7.基金项目
国家重点研发计划(2022YFB3605502) （2022YFB3605502）
