2英寸Fe掺杂高阻β相氧化镓单晶生长及(010)衬底性质研究OA北大核心

In this work,large-size Fe-doped β-Ga2O3 single crystals were grown by Czochralski method.High quality 2 inch(1 inch=2.54 cm)(010)substrates were fabricated,and the crystal quality,processing quality and electrical properties of these substrates were studied.The uniform appearance of the substrates under the polarizing strain gauge indicates the absence of twinning,cracks and other macrocopic defects,confirming their good macrocrystalline quality.The full width at half maximum(FWHM)of the X-ray rocking curve of(020)plane for these substrates is less than 29.7″,reflecting good microcrystalline quality.The surface average roughness(Ra)of the substrates is less than 0.240 nm,with a local thickness variation(LTV)less than 1.769 μm,a total thickness variation(TTV)of 5.092 μm,and a warp of 3.132 µm,suggesting superior substrate processing quality.Furthermore,the electrical resistivity of the substrate is～7 × 1011 Ω·cm,facilitating the development of the micro wave and radio frequency devices.