人工晶体学报2025，Vol.54Issue(2)：197-201,5.DOI:10.16553/j.cnki.issn1000-985x.20241120.001
2英寸Fe掺杂高阻β相氧化镓单晶生长及(010)衬底性质研究
Growth of 2-Inch Fe-Doped β-Ga2O3 Single Crystal with High Resistance and Properties of(010)Substrates
摘要
Abstract
In this work,large-size Fe-doped β-Ga2O3 single crystals were grown by Czochralski method.High quality 2 inch(1 inch=2.54 cm)(010)substrates were fabricated,and the crystal quality,processing quality and electrical properties of these substrates were studied.The uniform appearance of the substrates under the polarizing strain gauge indicates the absence of twinning,cracks and other macrocopic defects,confirming their good macrocrystalline quality.The full width at half maximum(FWHM)of the X-ray rocking curve of(020)plane for these substrates is less than 29.7″,reflecting good microcrystalline quality.The surface average roughness(Ra)of the substrates is less than 0.240 nm,with a local thickness variation(LTV)less than 1.769 μm,a total thickness variation(TTV)of 5.092 μm,and a warp of 3.132 µm,suggesting superior substrate processing quality.Furthermore,the electrical resistivity of the substrate is～7 × 1011 Ω·cm,facilitating the development of the micro wave and radio frequency devices.关键词
氧化镓/宽禁带半导体/晶体生长/直拉法/单晶衬底/掺杂Key words
Ga2O3/wide-bandgap semiconductor/crystal growth/Czochralski method/single crystal substrate/doping分类
数理科学引用本文复制引用
严宇超,王琤,陆昌程,刘莹莹,夏宁,金竹,张辉,杨德仁..2英寸Fe掺杂高阻β相氧化镓单晶生长及(010)衬底性质研究[J].人工晶体学报,2025,54(2):197-201,5.基金项目
浙江省"尖兵""领雁"研发攻关计划(2023C01193) （2023C01193）
中央高校基本科研业务费(226-2022-00200,226-2022-00250) （226-2022-00200,226-2022-00250）
博士后创新人才支持计划(BX20220264) （BX20220264）
国家青年拔尖人才支持计划 （）
杭州市领军型创新创业团队引进培育计划(TD2022012) （TD2022012）
