人工晶体学报2025，Vol.54Issue(2)：202-211,10.DOI:10.16553/j.cnki.issn1000-985x.2024.0266
光学浮区法生长Bi掺杂β-Ga2O3单晶及其光谱性质研究
Growth and Spectral Properties of Bi-Doped β-Ga2O3 Single Crystal by Optical Floating Zone Method
摘要
Abstract
β-Ga2O3,a semiconductor with a wide bandgap,has garnered significant attention from researchers owing to its remarkable optoelectronic properties.The exploration of how elemental doping affects the spectral properties of β-Ga2O3 constitutes a pivotal research area within materials science,offering substantial research value and promising application prospects.In this study,β-Ga2O3:6％Bi single crystal was successfully synthesized in the CO2 atmosphere through the utilization of the optical floating zone(OFZ)method.The primary focus of this investigation was to delve into the spectral properties of the Bi-doped β-Ga2O3 single crystal.To gain a thorough understanding of the samples,a battery of sophisticated characterization techniques was employed.These included X-ray diffraction(XRD)for analyzing the crystal structure,Raman spectroscopy for probing vibrational modes,scanning electron microscopy(SEM)combined with energy-dispersive X-ray spectroscopy(EDS)for examining surface morphology and elemental composition,X-ray photoelectron spectroscopy(XPS)for determining chemical states,and both transmission and fluorescence spectroscopy for assessing optical properties.The experimental outcomes unveiled that it is difficult for Bi ions to be doped into the β-Ga2O3 crystal lattice due to the large difference in ionic radii.The doped Bi ions predominantly occupied the sites of Ga ions within the GaO6 octahedra.Compared with unintentionally doped β-Ga2O3,Bi-dopedβ-Ga2O3 single crystals exhibit a decrease in transmittance in the infrared region and an increase in carrier concentration;the emission spectral intensity is reduced,and the fluorescence decay time is shortened.These groundbreaking discoveries not only enhance our comprehension of the spectral properties of Bi-doped β-Ga2O3 single crystals but also offer technical insights for the potential application of this material in diverse fields,including scintillator materials and radiation detection systems.关键词
Bi掺杂β-Ga2O3/光学浮区法/晶体生长/拉曼光谱/光谱特性/发射光谱强度/荧光衰减时间Key words
Bi-doped β-Ga2O3/optical floating zone method/crystal growth/Raman spectroscopy/spectral property/emission spectral intensity/fluorescence decay time引用本文复制引用
杨晓龙,唐慧丽,张超逸,孙鹏,黄林,陈龙,徐军,刘波..光学浮区法生长Bi掺杂β-Ga2O3单晶及其光谱性质研究[J].人工晶体学报,2025,54(2):202-211,10.基金项目
国家自然科学基金(12375181,12275194) （12375181,12275194）
上海市科学技术委员会资助项目(23511102302) （23511102302）
中央高校基本科研业务费专项资金项目(22120220626) （22120220626）
