人工晶体学报2025，Vol.54Issue(2)：227-232,6.DOI:10.16553/j.cnki.issn1000-985x.2024.0251
HVPE法同质外延氧化镓厚膜技术研究
Homoepitaxial Growth of Gallium Oxide Thick Films by HVPE Method
董增印 1王英民 2张嵩 2李贺 2孙科伟 2程红娟 2刘超3
作者信息
- 1. 中国电子科技集团公司第四十六研究所,天津 300220||山东大学集成电路学院,济南 250100
- 2. 中国电子科技集团公司第四十六研究所,天津 300220
- 3. 山东大学集成电路学院,济南 250100
- 折叠
摘要
Abstract
Halide vapor phase epitaxy(HVPE)is mainly utilized to obtain β-Ga2O3 homoepitaxial wafers because of its advantages such as high growth rate and efficient impurity doping controllability.In this paper,the homoepitaxial β-Ga2O3 thick films were grown by a vertical HVPE system.The effects of different growth pressures on the growth rate and epitaxial quality were investigated.It is found that when growing epitaxial β-Ga2O3 films of the same thickness,although reducing the growth pressure slows down the growth rate,it can easily obtain high crystalline quality β-Ga2O3 thick films with unbroken microstep arrays.The source of unintentional nitrogen impurities in the epitaxial films was analyzed,and the possibility of nitrogen decomposition was ruled out.By adjusting the Ⅵ/Ⅲ ratio,specifically by increasing the oxygen partial pressure,the concentration of nitrogen impurities in β-Ga2O3 epitaxial films can be effectively reduced from 8 × 1016 cm-3 to 1 × 1016 cm-3.Finally,2-inch high-quality HVPE β-Ga2O3 epitaxial wafer has been successfully achieved with optimized epitaxial growth parameters.The film thickness and carrier concentration are 15.8 µm and 1.5 × 1016 cm-3,the inhomogeneity of which are 3.6％and 7.6％,respectively.关键词
卤化物气相外延/β-Ga2O3/同质外延/生长压力/氮杂质/Ⅵ/Ⅲ比Key words
HVPE/β-Ga2O3/homoepitaxial/growth pressure/N impurity/Ⅵ/Ⅲ radio分类
数理科学引用本文复制引用
董增印,王英民,张嵩,李贺,孙科伟,程红娟,刘超..HVPE法同质外延氧化镓厚膜技术研究[J].人工晶体学报,2025,54(2):227-232,6.
