人工晶体学报2025，Vol.54Issue(2)：233-243,11.DOI:10.16553/j.cnki.issn1000-985x.2024.0260
基于mist CVD的高纯相α-Ga2O3生长与光电响应特性研究
Mist CVD Grown High-Phase-Purity α-Ga2O3 and Its Photoresponse Performance
摘要
Abstract
Ultra-wide bandgap semiconductor gallium oxide(Ga2O3)has important applications in power electronics and information sensing,its efficient and economical preparation is important to realize its industrial promotion.In this paper,a Sn-assisted mist chemical vapor deposition(mist CVD)technique is reported,based on which high-quality pure-phaseα-Ga2O3 thin films were successfully epitaxially grown on c-plane sapphire substrates by this non-vacuum,low-cost method.The mist CVD growth temperature regulation experiment shows that the temperature for epitaxial growth of pure-phase α-Ga2O3 thin films is between 500 and 600℃.The physical phase,morphology,optical features,elemental content and valence of the pure-phase α-Ga2O3 thin films were characterized by using X-ray diffraction(XRD),scanning electron microscopy(SEM),UV-visible spectrophotometer,and X-ray photoelectron spectrometer(XPS)techniques.The results indicate that the α-Ga2O3 thin films grown at the temperature of 600℃possess a higher degree of crystallinity,a denser and flatter surface morphology.Further,the deep-UV(DUV)photoresponse properties of α-Ga2O3 thin films were investigated by constructing photodetectors with metal-semiconductor-metal(MSM)structures.For α-Ga2O3 thin films prepared at 500 and 600 ℃,the photodetectors show photo-to-dark curr-ent ratios(PDCR)of 5.85×105 and 7.48 × 103,external quantum efficiencies(EQE)of 21.8％and 520％,and responsivities of 0.044 and 1.09 A/W,respectively.Under 6 V bias voltage and 254 nm illumination,the response time is 0.97/0.36 s for α-Ga2O3 thin film grown at 500 ℃,while it increases to 2.89/4.92 s for the sample grown at 600 ℃,which may be ascribed to the formation of donor impurities within the α-Ga2O3 thin films by Sn-assisted growth,and affecting the carrier transport efficiency.关键词
α-Ga2O3/雾相化学气相沉积/Sn辅助生长/光电响应/沉积温度/掺杂激活Key words
α-Ga2O3/mist chemical vapor deposition/Sn-assisted growth/photoresponse/deposition temperature/doping activation引用本文复制引用
姚苏昊,张茂林,季学强,杨莉莉,李山,郭宇锋,唐为华..基于mist CVD的高纯相α-Ga2O3生长与光电响应特性研究[J].人工晶体学报,2025,54(2):233-243,11.基金项目
国家重点研发计划(2022YFB3605404) （2022YFB3605404）
国家自然科学基金联合项目(U23A20349) （U23A20349）
江苏省双创人才团队项目(JSSCTD202351) （JSSCTD202351）
