人工晶体学报2025，Vol.54Issue(2)：244-254,11.DOI:10.16553/j.cnki.issn1000-985x.2024.0279
MBE同质外延生长Sn掺杂β-Ga2O3(010)薄膜的电子输运性质研究
Electronic Transport Properties of Sn-Doped β-Ga2O3(010)Thin Films Grown by MBE Homoepitaxial Growth
摘要
Abstract
In this work,the electronic transport properties of unintentionally doped(UID)and tin-doped β-Ga2O3 homoepitaxial thin films grown by molecular beam epitaxy(MBE)are reported,with electron densities ranging from 3.2 × 1016 to 2.9 × 1019 cm-3.The UID thin film with an electron density of 3.2 × 1016 cm-3 exhibits an excellent room-temperature mobility of 125 cm2·V-1·s-1 and a peak mobility of 875 cm2·V-1·s-1 at 80 K,reaching the advanced standard of MBE-grown Ga2O3 thin films.Temperature-dependent Hall measurements were utilized to characterize the electronic transport properties of the homoepitaxial thin films,yielding a tin dopant activation energy of 76.2 meV.By fitting the scattering model,the electronic scattering properties of this series of homoepitaxial thin films were analyzed,revealing that ionized impurity(Ⅱ)scattering from intrinsic defects and polar optical phonon(POP)scattering from Coulombic forces between cations and anions in the crystal limit the mobility growth at low and high temperatures,respectively.关键词
β-Ga2O3/外延薄膜/掺杂/激活能/迁移率/输运性质Key words
β-Ga2O3/epitaxial thin film/doping/activation energy/mobility/transport property引用本文复制引用
张子琦,杨珍妮,况思良,魏盛龙,徐文静,陈端阳,齐红基,张洪良..MBE同质外延生长Sn掺杂β-Ga2O3(010)薄膜的电子输运性质研究[J].人工晶体学报,2025,54(2):244-254,11.基金项目
国家重点研发计划(2022YFB3605501) （2022YFB3605501）
国家自然科学基金(22275154) （22275154）
