人工晶体学报2025，Vol.54Issue(2)：263-275,13.DOI:10.16553/j.cnki.issn1000-985x.2024.0265
超宽禁带氧化镓功率器件新结构及其电热特性研究进展
Research Progress of Ultra-Wide Bandgap β-Ga2O3 Power Devices on Novel Structures and Electro-Thermal Characteristics
摘要
Abstract
Gallium oxide(β-Ga2O3)exhibits an ultra-wide bandgap(Eg=4.5～4.9 eV)and a high critical breakdown electric field(Ebr=8 MV/cm).The Baliga's figure of merit forβ-Ga2O3-based devices is theoretically approximate four times and ten times as large as that of SiC-and GaN-based devices,respectively.Nevertheless,the breakdown voltage ofβ-Ga2O3 power devices is considerably below the theoretical limit;and there are few studies on high-power devices and their thermal stability.In addition,the low thermal conductivity of β-Ga2O3 materials and the presence of multiple defects result in many reliability issues,including the shift of electrical characteristics and the accelerated degradation of device performance.First,this work presents our researches on novel structures of β-Ga2O3 power devices,including the analysis of experimental results measured from the fabricated devices and the investigation of their electro-thermal characteristics.Second,this work studies the electro-thermal reliability of β-Ga2O3 mental-oxide-semiconductor field-effect transistor(MOSFET)and heterojunction field-effect transistor(HJFET).The ionized traps model and interface dipole ionization model are proposed to explain the degradation mechanism of β-Ga2O3 MOSFET and HJFET.Additionally,a novel reliability reinforcement technology is proposed to enhance the electro-thermal reliability of β-Ga2O3 HJFET.These studies indicate the considerable potential of β-Ga2O3 power devices in high-voltage,low-loss and high-reliability applications.Further,these studies provide novel insights into the design and optimisation of β-Ga2O3 power devices,and effectively advance the practical development of β-Ga2O3 power devices.关键词
氧化镓/功率半导体器件/二极管/场效应晶体管/电热特性/可靠性Key words
β-Ga2O3/power semiconductor device/diode/field effect transistor/electro-thermal characteristic/reliability分类
数理科学引用本文复制引用
魏雨夕,马昕宇,江泽俊,魏杰,罗小蓉..超宽禁带氧化镓功率器件新结构及其电热特性研究进展[J].人工晶体学报,2025,54(2):263-275,13.基金项目
稳定专项(WDZC202446003) （WDZC202446003）
电子薄膜与集成器件全国重点实验室开放课题项目(KFJJ202306) （KFJJ202306）
