人工晶体学报2025，Vol.54Issue(2)：312-318,7.DOI:10.16553/j.cnki.issn1000-985x.2024.0284
MOCVD生长的外延层掺杂氧化镓场效应晶体管
β-Ga2O3 Field-Effect Transistors with Doped Epitaxial Layer Grown by MOCVD
摘要
Abstract
In this paper,the Ga2O3 field-effect transistors were fabricated on the Ga2O3 epitaxial material grown by MOCVD,and their performances were studied.In order to reduce the on-resistances of the transistors,the epitaxial layer was optimally designed and the doping concentration was increased to above 1 × 1018 cm-3.The electron concentration and field-effect mobility of the epitaxial layer extracted from the long channel transistor were 2 × 1018 cm-3 and 55 cm2/(V·s),respectively,which result in a corresponding channel sheet resistance of 10.3 kΩ/sq.The specific on-resistances of the Ga2O3 MOSFETs with gate to drain spacings of 2 and 16 μm were 2.3 and 40.0 mΩ·cm2,and the corresponding breakdown voltages were 458 and 2 324 V,respectively.In order to further improve the breakdown voltages of the transistors,the p-type NiO gates were employed.The on-resistances of the fabricated Ga2O3 JFETs were significantly increased,but the breakdown voltages were improved to 755 V and above 3 000 V,respectively.The power figure of merits(P-FOMs)of the transistors with different gate to drain spacings were calculated,and it was found that they increased first and then decreased with the increase of the gate to drain spacings.The Ga2O3 MOSFET with a gate to drain spacing of 8 μm achieved the highest P-FOM,which was 192 MW/cm2,indicating the MOCVD epitaxial technology demonstrates an important application prospect for Ga2O3 power transistors.关键词
氧化镓/MOCVD外延/掺杂/比导通电阻/击穿电压/功率优值Key words
gallium oxide/MOCVD epitaxial/doping/specific on-resistance/breakdown voltage/power figure of merit分类
信息技术与安全科学引用本文复制引用
郁鑫鑫,李忠辉,董鑫,张洪良,齐红基,陈堂胜,沈睿,于含,张钊,赛青林,陈端阳,杨珍妮,谯兵,周立坤..MOCVD生长的外延层掺杂氧化镓场效应晶体管[J].人工晶体学报,2025,54(2):312-318,7.基金项目
国家重点研发计划(2022YFB3605504) （2022YFB3605504）
