发光学报2025，Vol.46Issue(3)：373-382,10.DOI:10.37188/CJL.20240292
p型MgZnOS透明导电薄膜及其p-n结型自驱动紫外光电探测器研究
p-type MgZnOS Transparent Conductive Films and p-n Junction Type Self-driven Ultraviolet Photodetectors
摘要
Abstract
In this study,to tackle the challenge of p-type doping of pure ZnO semiconductor,we proposed utilization of co-substitution strategies involving anionic(S2-)and cationic(Mg2+)ions,leveraging their synergistic effects to modify the electronic band structure of ZnO alloy to facilitate the activation of nitrogen acceptors.By applying pulsed laser deposition technique,we successfully fabricated N-doped p-type transparent conductive MgZnOS thin films.The crystal structures,op-toelectronic properties,and chemical compositions of the films were systematically analyzed using X-ray diffraction,transmit-tance spectroscopy,Hall-effect measurements,X-ray photoelectron spectroscopy,and secondary ion mass spectrometry.The experimental results indicate that the prepared MgZnOS∶N films possess a hexagonal wurtzite structure with preferential c-axis orientation.The deposited films exhibit a transmittance exceeding 80%in the ultraviolet-visible-near-infrared spectral region,and Mg doping significantly broadens the optical bandgap of the ZnO alloy films.The Mg and S contents in the prepared p-type conductive films are 9%and 25%,respectively,and the films have a hole concentration of 2.02×1019 cm-3,a Hall mobility of 0.25 cm2/(V·s),and a resistivity of 1.24 Ω·cm.Based on the successful fabrication of p-type MgZnOS∶N film,we designed and constructed a novel p-MgZnOS∶N/n-ZnO quasi-homogeneous p-n junction ultraviolet photodetector.The fabricated device exhibits typical diode rectification characteristics(with a turn-on voltage of approximately 1.21 V)and demonstrates stable ultraviolet photoresponse at 0 V bias,with a peak responsivity of 2.26 mA/W(at wavelength of 350 nm).The self-driven photoresponse is attributed to the effective separation and transport of photogenerated carriers by the built-in electric field of the p-n junction.This study offers valuable insights into the p-type doping of ZnO and holds substan-tial significance for the advancement of high-performance all-ZnO-based optoelectronic devices.关键词
脉冲激光沉积/p型掺杂/MgZnOS/p-n结Key words
pulsed laser deposition/p-type doping/MgZnOS/p-n junction分类
物理学引用本文复制引用
郭紫曼,汪洋,刘洋,张腾,陈剑,卢寅梅,何云斌..p型MgZnOS透明导电薄膜及其p-n结型自驱动紫外光电探测器研究[J].发光学报,2025,46(3):373-382,10.基金项目
国家自然科学基金(62274057,11975093,52202132) （62274057,11975093,52202132）
湖北省国际科技合作项目(2022EHB023) （2022EHB023）
湖北省自然科学基金(2022CFB758) Supported by National Natural Science Foundation of China(62274057,11975093,52202132) （2022CFB758）
Hubei International Science and Technology Cooperation Project(2022EHB023) （2022EHB023）
Natural Science Foundation of Hubei Province(2022CFB758) （2022CFB758）
