发光学报2025，Vol.46Issue(3)：399-411,13.DOI:10.37188/CJL.20240266
从单晶MgZnO到非晶Ga2O3:深紫外光电探测器的发展和选择
Deep UV Detection:from Single-crystalline MgZnO to Amorphous Ga2O3
摘要
Abstract
Wide bandgap semiconductors have great potential for the development of compact solar-blind ultravio-let detectors without filters.This article summarizes the research progress of deep ultraviolet photodetectors using wide bandgap oxide semiconductors including MgZnO and amorphous Ga2O3(a-Ga2O3)thin films.It has been found that the photoresponse performance of a-Ga2O3 thin film is comparable or even better than that of crystalline thin films.Numerous results demonstrate that oxygen vacancy(VO)defects play a crucial role in device performance.Based on the effective modulation of VO defects,high performance solar-blind ultraviolet photodetectors can be suc-cessfully achieved.In addition,the persistent photoconductivity effect,which is usually accompanied by the pres-ence of VO defects in oxide materials,provides a new perspective for the development of optoelectronic synaptic de-vices in deep ultraviolet range.Finally,a brief discussion is provided concerning the above research progress as well as some unsolved issues.These advancements are expected to promote the industrial application of wide bandgap ox-ide semiconductor materials,especially a-Ga2O3,in deep ultraviolet detection in the future.关键词
日盲紫外/光电探测器/镁锌氧/氧化镓/非晶Key words
solar-blind ultraviolet/photodetector/MgZnO/Ga2O3/amorphous分类
物理学引用本文复制引用
梁会力,朱锐,杜小龙,梅增霞..从单晶MgZnO到非晶Ga2O3:深紫外光电探测器的发展和选择[J].发光学报,2025,46(3):399-411,13.基金项目
国家自然科学基金(62174113,12174275,62404146) （62174113,12174275,62404146）
广东省基础与应用基础研究基金(2023A1515140094,2023A1515110730,2019B1515120057) Supported by National Natural Science Foundation of China(62174113,12174275,62404146) （2023A1515140094,2023A1515110730,2019B1515120057）
Guangdong Basic and Applied Basic Research Foundation(2023A1515140094,2023A1515110730,2019B1515120057) （2023A1515140094,2023A1515110730,2019B1515120057）
