发光学报2025，Vol.46Issue(3)：412-420,9.DOI:10.37188/CJL.20240265
氧空位对非晶InGaZnO基肖特基势垒二极管性能的影响
Impact of Oxygen Vacancy on Performance of Amorphous InGaZnO Based Schottky Barrier Diode
摘要
Abstract
Rectifying circuit,as a crucial component for converting alternating current into direct current,plays a pivotal role in energy harvesting microsystems.Traditional silicon-based or germanium-based rectifier di-odes hinder system integration due to their specific manufacturing processes.Conversely,metal oxide diodes,with their simple fabrication techniques,offer advantages for system integration.The oxygen vacancy defect of oxide semiconductor will greatly affect the electrical performance of the device,so the performance of the diode can be effectively controlled by adjusting the oxygen vacancy concentration.This study centers on optimizing the performance of diodes by modulating the oxygen vacancy concentration within InGaZnO films through control of oxygen flows during the sputtering process.Experimental results demonstrate that the diode exhibits a forward current density of 43.82 A·cm-2,with a rectification ratio of 6.94×104,efficiently rectifying input sine signals with 1 kHz frequency and 5 V magnitude.These results demonstrate its potential in energy conversion and man-agement.By adjusting the oxygen vacancy,a methodology is provided for optimizing the performance of rectify-ing diodes.关键词
InGaZnO/肖特基势垒二极管/氧空位/整流性能Key words
InGaZnO/Schottky barrier diode/oxygen vacancy/rectifying performance分类
电子信息工程引用本文复制引用
贾斌,童晓闻,韩子康,秦明,王立峰,黄晓东..氧空位对非晶InGaZnO基肖特基势垒二极管性能的影响[J].发光学报,2025,46(3):412-420,9.基金项目
国家重点研发计划(2020YFB2007400) （2020YFB2007400）
国家自然科学基金(61974026) Supported by National Key R&D Program of China(2020YFB2007400) （61974026）
National Natural Science Foundation of China(61974026) （61974026）
