发光学报2025，Vol.46Issue(3)：436-451,16.DOI:10.37188/CJL.20240268
稀土掺杂金属氧化物薄膜晶体管研究进展
Research Progress on Rare Earth Doped Metal Oxide Thin Film Transistors
摘要
Abstract
Metal oxide thin film transistors(MOTFTs)have great potential for application in large-sized organic light-emitting display driver backplanes due to their high carrier mobility and good electrical stability.In addition,the fabrica-tion processes of MOTFTs are compatible with amorphous silicon thin film transistors',resulting in their lower manufactur-ing costs and strong market advantages.However,the trade-off between mobility and stability which are the key indicators for measuring MOTFTs limits their high-end applications.Therefore,developing MOTFTs that combine high mobility with high stability has become a research hotspot and industry competition focus.Numerous studies indicate that rare earth(RE)doped oxide semiconductor materials is promising for achieving this goal.This paper focuses on reviewing the de-sign of RE doped oxide materials that achieve both high mobility and high stability,as well as the characteristic indicators that MOTFTs have reached,and discusses the changes and development potential of RE doped MOTFTs(RE-MOTFTs).关键词
金属氧化物薄膜晶体管/稀土元素/迁移率/稳定性Key words
metal oxide thin film transistors/rare earth/mobility/stability分类
电子信息工程引用本文复制引用
黄湘兰,彭俊彪..稀土掺杂金属氧化物薄膜晶体管研究进展[J].发光学报,2025,46(3):436-451,16.基金项目
国家重点研发计划(2021YFB3600800) （2021YFB3600800）
国家自然科学基金(62074059) Supported by National Key Research and Development Program of China(2021YFB3600800) （62074059）
National Natural Science Foundation of China(62074059) （62074059）
